10V Drive Nch MOSFET The part **ZDX130N50** is manufactured by **ROHM**. Below are the specifications, descriptions, and features based on the available knowledge:
### **Specifications:**
- **Type:** N-channel MOSFET
- **Drain-Source Voltage (VDSS):** 500V
- **Continuous Drain Current (ID):** 13A
- **Pulsed Drain Current (IDM):** 52A
- **Power Dissipation (PD):** 130W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 0.13Ω (typical)
- **Input Capacitance (Ciss):** 2500pF (typical)
- **Output Capacitance (Coss):** 500pF (typical)
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)
- **Turn-On Delay Time (td(on)):** 15ns (typical)
- **Turn-Off Delay Time (td(off)):** 60ns (typical)
- **Operating Temperature Range:** -55°C to +150°C
### **Description:**
The **ZDX130N50** is a high-voltage N-channel MOSFET designed for power switching applications. It offers low on-resistance and fast switching performance, making it suitable for high-efficiency power supplies, motor control, and industrial applications.
### **Features:**
- **Low On-Resistance (RDS(on))** for reduced conduction losses.
- **Fast Switching Speed** for improved efficiency in high-frequency applications.
- **High Voltage Rating (500V)** suitable for industrial and power supply designs.
- **Low Gate Charge (Qg)** for reduced drive requirements.
- **Avalanche Energy Rated** for robustness in rugged environments.
This information is based on ROHM's datasheet for the **ZDX130N50** MOSFET.
