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ZXM61N03FTA from ZETEX

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ZXM61N03FTA

Manufacturer: ZETEX

30V N-CHANNEL ENHANCEMENT MODE MOSFET Fast switching speed

Partnumber Manufacturer Quantity Availability
ZXM61N03FTA ZETEX 3000 In Stock

Description and Introduction

30V N-CHANNEL ENHANCEMENT MODE MOSFET Fast switching speed The part **ZXM61N03FTA** is manufactured by **ZETEX** (now part of **Diodes Incorporated**). Below are the specifications, descriptions, and features based on available information:  

### **Specifications:**  
- **Type:** N-channel enhancement-mode MOSFET  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 6.1A  
- **RDS(on)GS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** SOT23 (3-pin)  

### **Description:**  
The ZXM61N03FTA is a small-signal N-channel MOSFET designed for low-voltage switching applications. It offers low on-resistance and high efficiency, making it suitable for power management in portable devices and other low-power circuits.  

### **Features:**  
- Low threshold voltage for compatibility with logic-level drive  
- Fast switching performance  
- Low gate charge for improved efficiency  
- Compact SOT23 package for space-constrained designs  
- Lead-free and RoHS compliant  

For detailed electrical characteristics, refer to the official datasheet from Diodes Incorporated (formerly ZETEX).

Application Scenarios & Design Considerations

30V N-CHANNEL ENHANCEMENT MODE MOSFET Fast switching speed
Partnumber Manufacturer Quantity Availability
ZXM61N03FTA DIODES 13512 In Stock

Description and Introduction

30V N-CHANNEL ENHANCEMENT MODE MOSFET Fast switching speed Here is the factual information about the **ZXM61N03FTA** manufacturer **DIODES** specifications, descriptions, and features:

### **Specifications:**
- **Manufacturer:** DIODES Incorporated  
- **Part Number:** ZXM61N03FTA  
- **Transistor Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 5.1A  
- **RDS(ON) (Max):** 61mΩ @ VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 1.4W  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** SOT-23 (3-Pin)  

### **Description:**  
The **ZXM61N03FTA** is an N-channel enhancement-mode MOSFET designed for low-voltage, high-efficiency switching applications. It offers low on-state resistance and fast switching performance, making it suitable for power management in portable electronics, DC-DC converters, and load switching.

### **Features:**  
- Low **RDS(ON)** for reduced conduction losses  
- High current handling capability  
- Fast switching speed  
- Small SOT-23 package for space-constrained designs  
- Lead-free and RoHS compliant  

This information is based on the manufacturer's datasheet. For detailed performance graphs and application notes, refer to the official DIODES documentation.

Application Scenarios & Design Considerations

30V N-CHANNEL ENHANCEMENT MODE MOSFET Fast switching speed

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