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ZXMC10A816N8TC from Diodes/Zetex

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ZXMC10A816N8TC

Manufacturer: Diodes/Zetex

100V SO8 Complementary Dual enhancement mode MOSFET

Partnumber Manufacturer Quantity Availability
ZXMC10A816N8TC Diodes/Zetex 4488 In Stock

Description and Introduction

100V SO8 Complementary Dual enhancement mode MOSFET The ZXMC10A816N8TC is a P-channel MOSFET manufactured by Diodes/Zetex. Below are its key specifications, descriptions, and features:  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** -100V  
- **Continuous Drain Current (ID):** -10A  
- **Pulsed Drain Current (IDM):** -40A  
- **Power Dissipation (PD):** 3.1W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 160mΩ (max) at VGS = -10V  
- **Threshold Voltage (VGS(th)):** -1V to -3V  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** TO-252-3 (DPAK)  

### **Descriptions and Features:**  
- **P-Channel Enhancement Mode MOSFET**  
- **Low On-Resistance (RDS(on))** for reduced conduction losses  
- **High Current Handling Capability**  
- **Fast Switching Performance**  
- **Avalanche Energy Specified** for ruggedness  
- **Lead-Free and RoHS Compliant**  
- **Suitable for Power Management Applications**  

This MOSFET is commonly used in power switching, motor control, and DC-DC converters.

Partnumber Manufacturer Quantity Availability
ZXMC10A816N8TC DIODES 13500 In Stock

Description and Introduction

100V SO8 Complementary Dual enhancement mode MOSFET Here are the factual details about the **ZXMC10A816N8TC** manufacturer **DIODES** from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** DIODES  
- **Part Number:** ZXMC10A816N8TC  
- **Type:** N-Channel MOSFET  
- **Package:** DFN3030-8 (3mm x 3mm)  
- **Drain-Source Voltage (VDS):** 100V  
- **Continuous Drain Current (ID):** 10A  
- **RDS(ON) (Max):** 16mΩ @ VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 3.1W  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
The **ZXMC10A816N8TC** is an **N-Channel Enhancement Mode MOSFET** designed for high-efficiency power switching applications. It features low on-resistance and fast switching performance, making it suitable for DC-DC converters, motor control, and power management systems.  

### **Features:**  
- **Low RDS(ON)** for reduced conduction losses  
- **Fast switching speed** for improved efficiency  
- **AEC-Q101 qualified** for automotive applications  
- **Lead-free and RoHS compliant**  
- **Compact DFN3030-8 package** for space-constrained designs  

This information is based solely on the manufacturer's datasheet and technical documentation.

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