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ZXMP6A16DN8TA from DIDDES

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ZXMP6A16DN8TA

Manufacturer: DIDDES

DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET

Partnumber Manufacturer Quantity Availability
ZXMP6A16DN8TA DIDDES 500 In Stock

Description and Introduction

DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET The part **ZXMP6A16DN8TA** is manufactured by **DIDDES**. Below are the specifications, descriptions, and features based on the available knowledge:  

### **Specifications:**  
- **Manufacturer:** DIDDES  
- **Part Number:** ZXMP6A16DN8TA  
- **Type:** Power MOSFET  
- **Package:** TO-252 (DPAK)  
- **Polarity:** N-Channel  
- **Drain-Source Voltage (VDS):** 60V  
- **Continuous Drain Current (ID):** 16A  
- **Power Dissipation (PD):** 50W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 16mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V (min) - 4V (max)  

### **Descriptions & Features:**  
- Designed for high-efficiency power switching applications.  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- Fast switching performance.  
- Suitable for DC-DC converters, motor control, and power management systems.  
- Robust thermal performance due to the TO-252 package.  

For exact application details, refer to the official datasheet from DIDDES.

Partnumber Manufacturer Quantity Availability
ZXMP6A16DN8TA ZETEX 6000 In Stock

Description and Introduction

DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET The ZXMP6A16DN8TA is a P-channel enhancement-mode MOSFET manufactured by ZETEX (now part of Diodes Incorporated). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**
- **Manufacturer:** ZETEX (Diodes Incorporated)  
- **Type:** P-Channel Enhancement Mode MOSFET  
- **Drain-Source Voltage (VDS):** -60V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Continuous Drain Current (ID):** -4.3A  
- **Pulsed Drain Current (IDM):** -17A  
- **Power Dissipation (PD):** 3.1W  
- **On-Resistance (RDS(on)):** 0.16Ω (max) at VGS = -10V  
- **Threshold Voltage (VGS(th)):** -1V to -3V  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** SOT-23-6  

### **Descriptions and Features:**
- Designed for low-voltage, high-speed switching applications.  
- Low gate charge for improved efficiency in switching circuits.  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- Suitable for power management, load switching, and DC-DC conversion.  
- RoHS compliant.  

For detailed application notes or additional parameters, refer to the official datasheet from Diodes Incorporated.

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