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ZXTN26020DMFTA from ZETEX

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ZXTN26020DMFTA

Manufacturer: ZETEX

HIGH GAIN, LOW VCE(SAT) NPN BIPOLAR TRANSISTOR

Partnumber Manufacturer Quantity Availability
ZXTN26020DMFTA ZETEX 84000 In Stock

Description and Introduction

HIGH GAIN, LOW VCE(SAT) NPN BIPOLAR TRANSISTOR The ZXTN26020DMFTA is a NPN bipolar transistor manufactured by ZETEX (now part of Diodes Incorporated). Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Type:** NPN Bipolar Transistor  
- **Collector-Emitter Voltage (VCE):** 20V  
- **Collector Current (IC):** 6A (continuous)  
- **Power Dissipation (Ptot):** 3.1W  
- **DC Current Gain (hFE):** 100 (min) @ IC = 2A  
- **Transition Frequency (fT):** 150MHz  
- **Package:** SOT-89 (Surface Mount)  

### **Descriptions and Features:**
- Designed for high-current, low-voltage applications.  
- Low saturation voltage for improved efficiency.  
- High current gain (hFE) for better performance in switching and amplification.  
- Suitable for power management, motor control, and general-purpose amplification.  
- Compact SOT-89 package for space-constrained applications.  

For detailed datasheet information, refer to the manufacturer's documentation.

Partnumber Manufacturer Quantity Availability
ZXTN26020DMFTA DIODES 2400 In Stock

Description and Introduction

HIGH GAIN, LOW VCE(SAT) NPN BIPOLAR TRANSISTOR The part **ZXTN26020DMFTA** is manufactured by **DIODES**.  

### **Specifications:**  
- **Transistor Type:** NPN  
- **Voltage - Collector Emitter Breakdown (Max):** 60V  
- **Current - Collector (Ic) (Max):** 6A  
- **Power - Max:** 3W  
- **DC Current Gain (hFE) (Min) @ Ic, Vce:** 100 @ 1A, 2V  
- **Frequency - Transition:** 150MHz  
- **Operating Temperature:** -55°C to +150°C  
- **Package / Case:** SOT-23F-3  

### **Descriptions and Features:**  
- **High Current Gain:** Provides efficient amplification.  
- **Low Saturation Voltage:** Enhances power efficiency.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **Compact SOT-23F-3 Package:** Space-saving design for modern electronics.  
- **Wide Operating Temperature Range:** Reliable performance in various environments.  

This transistor is commonly used in power management, amplification, and switching applications.  

(Source: DIODES datasheet for ZXTN26020DMFTA)

Partnumber Manufacturer Quantity Availability
ZXTN26020DMFTA DIDDES 3000 In Stock

Description and Introduction

HIGH GAIN, LOW VCE(SAT) NPN BIPOLAR TRANSISTOR The part **ZXTN26020DMFTA** is manufactured by **Diodes Incorporated (DIDDES)**.  

### **Specifications:**  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Package:** SOT-23F (SC-89)  
- **Collector-Emitter Voltage (VCEO):** 60V  
- **Collector-Base Voltage (VCBO):** 60V  
- **Emitter-Base Voltage (VEBO):** 5V  
- **Continuous Collector Current (IC):** 2A  
- **Power Dissipation (PD):** 1.5W  
- **DC Current Gain (hFE):** 100 (min) @ 500mA, 5V  
- **Transition Frequency (fT):** 250MHz  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions and Features:**  
- Designed for **high-speed switching** and **amplification** applications.  
- **Low saturation voltage** for improved efficiency.  
- **High current gain** for better performance in driver circuits.  
- **Compact SOT-23F package** for space-constrained designs.  
- Suitable for **power management, motor control, and general-purpose switching**.  

For detailed electrical characteristics, refer to the manufacturer's datasheet.

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