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ZXTP2013GTA from ZETEX

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ZXTP2013GTA

Manufacturer: ZETEX

100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

Partnumber Manufacturer Quantity Availability
ZXTP2013GTA ZETEX 1000 In Stock

Description and Introduction

100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 The ZXTP2013GTA is a PNP transistor manufactured by ZETEX (now part of Diodes Incorporated). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Type:** PNP Transistor  
- **Collector-Emitter Voltage (VCE):** -20V  
- **Collector-Base Voltage (VCB):** -20V  
- **Emitter-Base Voltage (VEB):** -5V  
- **Continuous Collector Current (IC):** -1A  
- **Total Power Dissipation (Ptot):** 1W (at Tamb ≤ 25°C)  
- **DC Current Gain (hFE):** 100 (min) at IC = -100mA, VCE = -1V  
- **Transition Frequency (fT):** 150MHz (typical)  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** SOT-23 (Surface Mount)  

### **Descriptions:**  
- Designed for general-purpose amplification and switching applications.  
- Suitable for low-voltage, high-speed switching.  
- Optimized for low saturation voltage and high current gain.  

### **Features:**  
- High current gain (hFE).  
- Low saturation voltage.  
- Fast switching speed.  
- Compact SOT-23 package for space-constrained applications.  

This information is based on the manufacturer's datasheet. For detailed performance curves and application notes, refer to the official documentation.

Partnumber Manufacturer Quantity Availability
ZXTP2013GTA ZETEXDIODES 729 In Stock

Description and Introduction

100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Here are the factual details about the ZXTP2013GTA from the manufacturer ZETEX/DIODES:

### **Specifications:**  
- **Manufacturer:** ZETEX/DIODES  
- **Part Number:** ZXTP2013GTA  
- **Type:** PNP Transistor  
- **Package:** SOT-23  
- **Collector-Emitter Voltage (VCEO):** -20V  
- **Collector-Base Voltage (VCBO):** -20V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Continuous Collector Current (IC):** -1A  
- **Power Dissipation (PD):** 1W  
- **DC Current Gain (hFE):** 100 (min) @ IC = -100mA  
- **Transition Frequency (fT):** 100MHz (typical)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
The ZXTP2013GTA is a PNP bipolar transistor designed for high-speed switching and amplification applications. It is housed in a compact SOT-23 package, making it suitable for space-constrained designs.  

### **Features:**  
- High current gain (hFE)  
- Low saturation voltage  
- Fast switching speed  
- Suitable for general-purpose amplification and switching  
- RoHS compliant  

This information is based on the manufacturer's datasheet. For exact performance characteristics, refer to the official documentation.

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