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ZXTP25060BFHTA from ZETEX

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ZXTP25060BFHTA

Manufacturer: ZETEX

60V, SOT23, PNP medium power transistor

Partnumber Manufacturer Quantity Availability
ZXTP25060BFHTA ZETEX 1600 In Stock

Description and Introduction

60V, SOT23, PNP medium power transistor The ZXTP25060BFHTA is a PNP transistor manufactured by ZETEX (now part of Diodes Incorporated). Below are the factual specifications, descriptions, and features from the available knowledge base:

### **Specifications:**  
- **Type:** PNP Bipolar Junction Transistor (BJT)  
- **Collector-Emitter Voltage (VCE):** -60V  
- **Collector-Base Voltage (VCB):** -60V  
- **Emitter-Base Voltage (VEB):** -5V  
- **Continuous Collector Current (IC):** -2.5A  
- **Peak Collector Current (ICM):** -5A  
- **Power Dissipation (Ptot):** 1.25W (at 25°C)  
- **DC Current Gain (hFE):** 100 (min) at IC = -1A, VCE = -2V  
- **Transition Frequency (fT):** 175MHz (typical)  
- **Operating Junction Temperature (Tj):** -55°C to +150°C  
- **Package:** SOT-23 (Surface Mount)  

### **Descriptions and Features:**  
- Designed for high-speed switching and linear amplification applications.  
- Low saturation voltage (VCE(sat)), improving efficiency in switching circuits.  
- High current gain (hFE) for improved performance in driver stages.  
- Suitable for power management, motor control, and general-purpose amplification.  
- Compact SOT-23 package for space-constrained PCB designs.  

For detailed application notes or additional parameters, refer to the official datasheet from Diodes Incorporated (formerly ZETEX).

Application Scenarios & Design Considerations

60V, SOT23, PNP medium power transistor
Partnumber Manufacturer Quantity Availability
ZXTP25060BFHTA SEMTECH 3000 In Stock

Description and Introduction

60V, SOT23, PNP medium power transistor The ZXTP25060BFHTA is a PNP transistor manufactured by SEMTECH. Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:  

### **Specifications:**  
- **Type:** PNP Bipolar Transistor  
- **Collector-Emitter Voltage (VCEO):** -60V  
- **Collector-Base Voltage (VCBO):** -60V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Continuous Collector Current (IC):** -4A  
- **Power Dissipation (PD):** 2W  
- **DC Current Gain (hFE):** 100 (min) @ IC = 1A, VCE = -2V  
- **Transition Frequency (fT):** 50MHz (typical)  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** SOT-23 (Surface Mount)  

### **Descriptions:**  
- Designed for high-current, low-voltage applications.  
- Suitable for switching and amplification purposes.  
- Features low saturation voltage for improved efficiency.  

### **Features:**  
- High current gain (hFE) for improved performance.  
- Low saturation voltage (VCE(sat)).  
- Fast switching speed.  
- Compact SOT-23 package for space-constrained applications.  
- RoHS compliant.  

This information is strictly based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

60V, SOT23, PNP medium power transistor

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