1SV273 ,RF Varactor DiodesTOSHIBA
TOSHIBA VARIABLE CAPACITANCE DIODE
1sv273 .
SILICON EPITAXIAL PLANAR TYPE i
SEMICON ..
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1SV273
RF Varactor Diodes
TOSHIBA VARIABLE CAPACITANCE DIODE
SEMICONDUCTOR , S V 2 , 3
THSHIA . _
TECHNICAL DATA SILICON EPITAXIAL PLANAR TYPE I
(ISV273) _
VCO FOR UHF BAND RADIO . Unit in mm
0 High Capacitance Ratio t Clvl C4v=2.0 (Typ.)
. tt.a:htt.t
0 Low Series Resistance , r3=0.28.0 (7lyp0 g
a Small Package 2 D
MAXIMUM RATINGS (Ta-ZS‘C) g g ii
CHARACTERISTIC SYMBOL RATING UNIT 5 - ot Ok0.0s
Reverse Voltage VR 10 V - +0
Junction Temperature Ti, IM "C -l--P2.'-!us Jls1sc1-hl.s-
Storage Temperature Range Tat; ~55~125 ”0 -
_ Ca 3 ts),
JEDEC _ -
EIAJ ..
TOSHIBA 1ii'IA
ELECTRICAL CHARACTERISTICS (Ta =25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage V3 m = 1 PA 10 - - If
Reverse Current IR Va T.r. 10V - - 3 nA
Capacitance C1v VR '= IV, f 'rr. 1MHz 15 16 17 . Ni'
Capacitance 04v VR =4V, f "at 1MHz 7.3 8.0 8.7 pl?
Capacitance Ratio CIV I csv - 1.8 2.0 - --
Series Resistance tg VR car. IV, f= 470MHz , - 0 .28 0.5 n
M AR Kl N G
CI“ TF ED
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ttrttent.dettrtest 1mm om umihl mm In on cum no I mumn-q'u MI
muIm .rtr-xttrFl, Man 'tu.llty M Nllohlllly. mi l, 'l'l',dlll'Sl mum my mole Mu un- Alumna a mum .ppIk-uon. Imam; TOSHIHA CORPORATION
rm limited to an um " mom may mow. mp km or wuuhlp Immnumn mm: dunk. deuI tttstr-tttttttet. combmuu-
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SEMICONDUCTOR
TECHNICAL DATA
1SV273
(15V273)
CAPACITANCE CV (p?)
SERIES WARE r, (m
CAPACITANCE cmual: lumo
8c (I)
I-lMHn
T132512
ll 4 8 " "
REVERSE VOLTAGE Va (V)
" - vi,
f-WOMHS
Ta '25’0
0 8 ' , " 20
REVERSE VOLTAGE VR (V)
3c -Ta
" XMHI
-40 -20 0 2O " 60 "
AMBIENT TEMPERATURE TI ('0)
mvmsz cumm' m (m
mum mmhcn r. (m
"h', 4 tt . " a
REVERSE VOLTAGE " (V)
too 800 600 1000 2000
FREQUENCY I (Mill) _
1SV273 -. 2*
1294 - 7 - , 1
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