IC Phoenix
 
Home ›  II30 > 2N6847-IRFF9220-JANTX2N6847,-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
2N6847-IRFF9220-JANTX2N6847 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
JANTX2N6847IRN/a62avai-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
IRFF9220IORN/a500avai-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
2N6847IRN/a67avai-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package


IRFF9220 ,-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF packagePD - 90553CIRFF9220REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6847HEXFET TRANSISTORS JANTXV2N68 ..
IRFF9230 ,-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF packagePD - 90551D ..
IRFF9230 ,-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF packageFeatures:age control, very fast switching, ease of parelleling Repetitive Avalanche Ratingsand tem ..
IRFG110 ,100V Quad N-Channel MOSFET in a MO-036AB packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
IRFG5110 ,100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB packageElectrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise Specified)Param ..
IRFG6110 ,100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB packageElectrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise Specified)Param ..
ISL6443AIRZ , 300kHz Dual, 180° Out-of-Phase, Step-Down PWM and Single Linear Controller
ISL6443IRZ-T , 300kHz Dual, 180 Degree Out-of-Phase, Step-Down PWM and Single Linear Controller
ISL6443IRZ-T , 300kHz Dual, 180 Degree Out-of-Phase, Step-Down PWM and Single Linear Controller
ISL6443IRZ-TK , 300kHz Dual, 180 Degree Out-of-Phase, Step-Down PWM and Single Linear Controller
ISL6444CA ,Dual PWM Controller with DDR Memory Option for Gateway Applicationsfeatures essential for o- Out-of-phase operation with 90 phase shift for two-proper powering of DDR ..
ISL6444CA-T ,Dual PWM Controller with DDR Memory Option for Gateway ApplicationsApplicationsThe ISL6444 monitors the output voltages. Each PWM controller generates a PGOOD (power ..


2N6847-IRFF9220-JANTX2N6847
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
International
IEZR Rectifier
REPETITIVE AVALANCHE AND tiv/tit RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS RDS(on) ID
IRFF9220 -200V 159 -2.5A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
PD - 90553C
IRFF9220
J ANTX2N6847
JANTXV2N6847
REF:MIL-PRF-19500/563
200V, P-CHANNEL
Features:
I: Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Parameter Units
ID @ VGS = -10V, TC = 25°C Continuous Drain Current -2.5
ID @ VGS = -10V, TC = 100°C Continuous Drain Current -1.6 A
IDM Pulsed Drain Current C) -10
PD @ TC = 25°C Max. Power Dissipation 20 W
Linear Derating Factor 0.16 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 180 m1
IAR Avalanche Current Cf) - A
EAR Repetitive Avalanche Energy co - m.)
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 0.98(typica1) g
For footnotes refer to the last page
1
01/22/01
IRFF9220 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -200 - - V VGS = 0V, ID = -1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - -0.22 - VPC Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 1.5 Q VGS = -10V, ID = -1.6A ©
Resistance - - 1.725 VGS =-10V, ID =-2.5A co
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDS = VGS, ID = -250pA
gfs Forward Transconductance 1.0 - - S (U) VDS > -15V, IDS = -1.6A GD
IDSS Zero Gate Voltage Drain Current - - -25 VDS=-l60V, VGs=0V
- - -250 HA VDS = -160V
VGS = 0V, T] = 125°C
IGSS Gate-to-Source Leakage F orward - - -100 VGS = -20V
IGSS Gate-to-Source Leakage Reverse - - 100 nA VGS = 20V
Qg Total Gate Charge 4.0 - 15 VGS =-10V, ID = -2.5A
oy Gate-to-Source Charge 1.1 - 3.2 nC VDS= -100V
Qgd Gate-to-Drain (Niller') Charge 0.8 - 8.4
td(0n) Turn-On Delay Time - - 50 VDD = -100V, ID = -2.5A,
tr Rise Time - - 70 RG =75!)
1d(off) Turn-Off Delay Time - - 40 ns
tf Fall Time - - 50
LS + LD Total Inductance - 7.0 - nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 330 VGS = 0V, VDS = -25V
Cogs Output Capacitance - 100 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 33 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - -2.5 A
ISM Pulse Source Current (Body Diode) (I) - - -10
VSD Diode Forward Voltage - - -4.8 V Tj = 25°C, Is =-2.5A, VGS = 0V ©
trr Reverse Recovery Time - - 300 nS Tj = 25°C, IF = -2.5.A, di/dt f -100A/us
QRR Reverse Recovery Charge - - 3.0 “C VDD S -50V @
ton F orward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 6.25 o
RthJA Junction-to-Ambient - - 175 C/W Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED