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2SA1315

Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications

Partnumber Manufacturer Quantity Availability
2SA1315 500 In Stock

Description and Introduction

Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications The 2SA1315 is a PNP silicon transistor manufactured by various companies, including Toshiba. Its key specifications are:

- **Type:** PNP
- **Material:** Silicon
- **Collector-Base Voltage (VCBO):** -50V
- **Collector-Emitter Voltage (VCEO):** -50V
- **Emitter-Base Voltage (VEBO):** -5V
- **Collector Current (IC):** -1.5A
- **Power Dissipation (PC):** 1W
- **DC Current Gain (hFE):** 60 to 320
- **Transition Frequency (fT):** 80MHz
- **Operating Temperature Range:** -55°C to +150°C
- **Package:** TO-92

These specifications are typical and may vary slightly depending on the manufacturer. Always refer to the datasheet for precise details.

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