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52207-0685 , 1.00mm (.039") Pitch FFC/FPC Connector, SMT, Right Angle, ZIF, Top Contact Style Receptacle, 6 Circuits, Lead-free, High Barrier Packaging
3SK127
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS)
TOSHIBA 3SK127
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE
3SK'il27
TV TUNER, UHF RF AMPLIFIER APPLICATIONS Unit in mm
TV TUNER, UHF MIXER APPLICATIONS
. Superior Cross Modulation Performance.
. Low Reverse Transfer Capacitance : Crss=0.03pF(Max.)
. Low Noise Figure : NF=3.2dB (Typ.)
m 1.50 - 0215
",0. 5" 2
MAXIMUM RATINGS (Ta=25°C) 3: "tH . 'if/e''';
CHARACTERISTIC SYMBOL RATING UNIT c;:l:ij\.-l_: I tD C.?
Drain-Source Voltage VDS 15 V 5a ii,
Gate 1 - Source Voltage VGlS i 8 V 3
Gate 2 - Source Voltage Vggs :8 V l. GATE 1
Drain Current ID 30 mA 2. GATE 2
Drain Power Dissipation PD 150 mW i 2333;
Channel Temperature Teh 125 T
Storage Temperature Range Tstg -55-125 "C JEDEC -
EIAJ -
TOSHIBA 2-3J1A
ELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight : 0.013g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate 1 Leakage Current IGlsS VDS =0V, VGISZ i6V, VG2S-- 0V - - i 50 nA
Gate 2 Leakage Current IGZSS VDS =0V, VGlS= 0V, VG2S-- i 6V - - i 50 nA
. VGlS= -4V, VG2S-- -4V
Drain-Source Voltage V (BR) DSX ID = 100PA 15 - - V
. IDSS - - -
Drain Current (N t ) VDS=6V, VG1s--0V, VG2S=3V 0 - 6 mA
Gate l-Source Cut-off Voltage VGlS (OFF) VDS = 6V, ngs = 3V, ID = 100 pA - 1.5 - 1.0 V
Gate 2-Souree Cut-off Voltage Vst (OFF) VIN? = 6V, VGlS = 3V, ID = 100 PA - 1.0 - 1.0 V
Forward Transfer Admittance Istl 21r2v' vas-- 3V, ID = 10mA - 17 - mS
Input Capacitance Ciss VIN? = 6V, VGZS = 3V, ID = 10mA - 2.0 - pF
Reverse Transfer Capacitance Crss f = 1MHz - - 0.03 pF
Power Gain Gps VDS = 6V, VG2S = 3V, ID = 10mA - 16 - dB
Noise Figure NF f = 800MHz (Fig.1) - 3.2 - dB
Note: IDSS Classification O:0--2mA, Y:1~6mA
961001 EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the apflications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1998-10-28 1/5
TOSHIBA 3SK127
Marking
III Cl
III III
Fig. 1 800MHz Gps, NF TEST CIRCUIT
INPUT SHIELD OUTPUT
Rg=5OQ / Rg=500
A l/ A
L1 I L3
1~20pF F.B CASE
1000PF,, f
t, '1000pF" It, ' It,
2 I T. .J g J 2
O CD O
H M . H H
:33? o o
o VG2s VDS
L1~L4 : ¢0.8mm SILVER PLATED COPPER WIRE
C : AIR TRIMMER TTA25A200A(MURATA MFG, Co., Ltd.)
RFC 1 : ¢0.35mm COPPER WIRE 3mm ID, 7T
RFC 2 .' ¢O.35mm COPPER WIRE 3mm ID, 10T
1998-10-28 2/5
TOSHIBA
3SK127
ID - VDS
COMMON
SOURCE
ID - VDS
COMMON SOURCE
Ta = 25°C
VG1 S = 3V
2 Ta=25°C 2
g VG2s=3V g
a 2.5-2 Cl
H VGlS=3V H
[:1 tN
ttt Cd
ttt ttt
2 4 6 8 10 0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGlS ID - VG2S
COMMON COMMON
SOURCE SOURCE
a Ta=25°C A Ta=25°C
g VDS=6V fi VDS=6V
Ed [11
-1 0 1 2 3 -1 0 1 2 3 4
GATEl-SOURCE VOLTAGE les (V) GATE2-S0URCE VOLTAGE vats (V)
lstl - VGlS Gps, NF - VDS
g COMMON
a SOURCE
il Ta=25°C A A
E VDs=6V li) r':.',]
c: f=1kHz
<1 k'. :x.
n: (l)
E .E, E m
m < E):
a Tt r: 0
<2 Le E
E5 5 COMMON
© t SOURCE a
n: m Ta=25°C 5
g VG25=3V a
ttd ID=10mA
E f=800MHz
-1 o 1 2 3 0 2 4 6 8 10 1
GATEl-SOURCE VOLTAGE les (V) DRAIN-SOURCE VOLTAGE VDS (V)
1998-10-28 3/5
TOSHIBA
Gps - VG2S
a ,/ COMMON SOURCE
c 0 /''" BIAS CIRCUIT
v'-,) VG2s VDD
a -10 I
R=2000
L: I I
g -20 I VDD=6V(=VDs)+R><10mA
l at VG2S--3V
-30 f=800MHz
Ta=25°C
-2 -1 o 1 2 3 4
GATEZ-SOURCE VOLTAGE Vazs (V)
Yis - f
COMMON
iii SOURCE
g Ta=25°C
m VDs=6V
5 VG2s=3V
M D lOmA
- 4 - 2 0 2 4 6 8
INPUT CONDUCTANCE gis (mS)
REVERSE TRANSFER CONDUCTANCE gre (mS)
-0.02 o 0.02 0.04 0.06 0.08 0.1
3 o. 1.0GHz
'd 0.02
E 0. COMMON
W2 -0.02 . SOURCE
a . Ta=25°C
E VDs=6V
g -0. Vst=3V
ID=10mA
INPUT CAPACITANCE Ciss (pF)
FORWARD TRANSFER SUSCEP’I‘ANCE
bfs (mS)
OUTPUT SUSCEPTANCE hos
3SK127
Ciss - VG2S
COMMON SOURCE
VDS = 6V
VG1s: VG2s = 4V
ID = 10mA
f= lMHz
Ta = 25''C
- 4 - 2 0 2 4
GATEbSOURCE VOLTAGE Vst (V)
st - f
FORWARD TRANSFER CONDUCTANCE gfe (mS)
00 4 8 12 16 20
COMMON l
SOURCE 1 -
Ta=25°C 1 I'.
-4 VDS=6V 0.2,
VGZS = 3 V ,
ID = 10mA 0.3
f, 0.4
-8 0.5
- 12 0.8
-16 l I
COMMON
. SOURCE
0.3 Ta = 25''C
VDS = 6V
0 VGZS = 3V
0.1 ID = 10mA
00 0.4 0.8 1.2 1.6 2.0 2.4
OUTPUT CONDUCTANCE gos (mS)
1998-10-28 4/5
TOSHIBA
3SK127
DRAIN POWER DISSIPATION
PD (mW)
PD - Ta
25 50 75 100
AMBIENT TEMPERATURE Ta (°C)
1998-10-28 5/5
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