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3SK294
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ VHF RF AMPLIFIER APPLICATIONS)
TOSHIBA 3SK294
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE
351(294
TV TUNER, VHF RF AMPLIFIER APPLICATION Unit in mm
0 Superior Cross Modulation Performance 2At(hl
0 Low Reverse Transfer Capacitance : Crss=20fF(Typ.)
0 Low Noise Figure : NF=1.4dB (Typ.) N -. 1 17 '3
MAXIMUM RATINGS (Ta = 25°C) "g. ll. Cu,
CHARACTERISTIC SYMBOL RATING UNIT CT Tn -
Drain-Source Voltage VDS 12.5 V m5 t 3
Gate l-Source Voltage VGlS i8 V 3? _ I fi
Gate 2-Source Voltage VG2S i8 V 3 o 1 li,
Drain Current ID 30 mA :1;
Drain Power Dissipation PD 100 mW c,
Channel Temperature Teh 125 T ;: 32:: l.
Storage Temperature Range Tstg -55--125 T 3. DRAIN
4. SOURCE
MARKING 2 1 Tze Name
n ' JEDEC -
U EIAJ -
El l? TOSHIBA 2-2KlB
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate 1 Leakage Current IGISS VDs=0, VGlS= i6V, VG2S=0 - - 1'50 nA
Gate 2 Leakage Current IGQSS VDS=0, VG1s=0, Vggsz i6V - - :50 nA
. VGlS= -0.5V, VG2S-- -0.5V,
Drain-Source Voltage V (BR) DSX ID = 1 00p A 12.5 - - V
. VDs=6V, vG1s--0, - -
Drain Current IDSS VG2S= 4.5V 0.1 mA
Gate l-Source Cut-off Vng--6V, Vggs=4.5V,
Voltage VGlS (OFF) ID = 100PA 0.3 0.9 1.3 V
Gate 2-Source Cut-off VDs=6V, VG28=4.OV,
Voltage VG2S (OFF) ID = 100 ,aA 0.5 1.0 1.5 V
Forward Transfer VDS=6V, VG23=4.5V,
Admittance 'st| ID = 10mA, f= 1kHz 19.5 23.5 - mS
Input Capacitance Ciss VDS=6V, VG2s--4.5V, - 2.5 3.1 pl?
Reverse Transfer Capacitance Crss ID = 10mA, f-- IMHz - 20 40 fF
P . = = 23.5 26.0 -
Ter Cfam Gps VDS 6V, Vst 4.5V, dB
Noise Flgure NF ID: lOmA, f-- 500MHz - 1.4 2.5
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity is.nd.vuln.erab.ility t9 physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations In which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
1998-03-12 1/4
TOSHIBA 3SK294
Fig.1 Gps/NF TEST CIRCUIT
INPUT SHIELD OUTPUT
RG--50n RL=5OQ
HrilooopF
1000pF. tt E IIOOOpF
10000p
lOOOOpF
lOOOOpF
VG2S VDS
c3 o—w.
L1~L4 : ¢0.8mm SILVER PLATED COPPER WIRE
C : AIR TRIMMER TTA25A200A(MURATA MFG, Co., Ltd.)
RFC 1 : ¢0.35mm VEW 3I.D.7T
RFC 2 : ¢0.35mm VEW 3I.D.10T
1998-03-12 2/4
TOSHIBA
3SK294
ID (mA)
DRAIN CURRENT
ID (mA)
DRAIN CURRENT
FORWARD TRANSFER ADMITTANCE
ID - VDS
COMMON
SOURCE
vas = 4.5V
Ta = 25°C
2 4 6 8 10
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGlS
COMMON
SOURCE -
V - 4.5V
VDS = 6V G25
Ta = 25°C 4
1 2 3 4 5
GATE 1-SOURCE VOLTAGE les (V)
lstl - VGlS
COMMON
SOURCE
VDS = 6V
Ta = 25°C
VG2S = 4.5V
1 2 3 4 5
GATE l-SOURCE VOLTAGE VGlS (V)
DRAIN CURRENT
ID (mA)
DRAIN CURRENT
FORWARD TR|$N|SFER ADMITTANCE
ID - VDS
COMMON
SOURCE
VGI s = 4.0V
Ta = 25''C
2 4 6 8 10
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VG2S
COMMON
SOURCE
VDS = 6V
Ta = 25°C VGIS=4V
1 2 3 4 5
GATE 2-SOURCE VOLTAGE Vats (V)
lstl - ID
COMMON
SOURCE
VDS = 6V
Ta = 25°C
Vggs = 4.5V
4 8 12 16 20
DRAIN CURRENT m (mA)
1998-03-12 3/4
TOSHIBA 3SK294
Gps, NF - VDS Gps, NF - ID
30 10 30 10
(i.''; Gps =2 (z'.), G E
a ' a '
w vG23=4.5v Z w VDs=6V a
a ID=10mA ti a VG25=4.5V g
'a' f-- 500MHz a a' f-- 500MHz 3
: Ta = 25°C a 2': Ta = 25°C r:
M M M M
3 W, 5 E2
0 o o o
D. z D. 2:
0 2 4 6 8 10 12 0 4 8 12 16 20 24
DRAIN-SOURCE VOLTAGE VDs (V) DRAIN-CURRENT ID (mA)
Ciss - VGZS PD - Ta
t. VDS - 6V
V VGIS : Vggs=4.5V J?
I ID = 10mA
f-- IMHz E
U) Ta = 25°C <
if: iii
-4 -2 0 2 4 6 0 20 40 60 80 100 120 140
GATE 2-SOURCE VOLTAGE Vst (V) AMBIENT TEMPERATURE Ta CC)
1998-03-12 4/4
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