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4GBL06
50V Bridge in a GBL package
Bulletin 12716 rev.F 06/03
International
TOR Rectifier 4GBL Series
4.0 Amps Single Phase Full Wave Bridge Rectifier
Features
III Diode chips are glass passivated
III Easy to assemble & install on P.C.B. |O(AV) = 4A
I: Hi h S C C bili -
lg urge urrent apa ility VRRM - 50/ 800V
El High Isolation between terminals and molded case (1500 VRMS)
El Lead free terminals solderable as per MIL-STD-750 Method 2026
El Terminals suitable for high temperature soldering at 260''C for 8-10 secs
El UL E160375 approved
Description
These GBL Series of Single Phase Bridges consist
of four glass passivated silicon junction connected
as a Full Wave Bridge. These four junctions are
encapsulated by plastic molding technique. These
Bridges are mainly used in Switch Mode power
supply and in industrial and consumer equipment.
Major Ratings and Characteristics
Parameters 4GBL Units
IO 4 A
@ TC 50 °c
IFSM @ 50Hz 150 A
@ 60Hz 158 A
Ft @ 5on 1 13 A25
60Hz 104 A25
@ 4GBL
VRRM range 50 to 800 V
T J - 55 to 150 ''C
1
4GBL Series
Bulletin
12716 rev.F 06/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
International
IEER Rectifier
Voltage VRRM, max repetitive VRMS, maximum VRSM, max non-repetitive IRRM max. IRRM max.
Type number Code peak rev. voltage RMS voltage reverse voltage @ rated VRRM @ rated VRRM
TJ=TJmax. TJ=TJmax. TJ=TJmax. TJ=25°C TJ=150°C
V V V pA pA
4GBL 005 50 35 75 5 400
01 100 70 150 5 400
02 200 140 275 5 400
04 400 280 500 5 400
06 600 420 725 5 400
08 800 560 900 5 400
Forward Conduction
Parameters 4GBL Unit Conditions
Io Maximum DC output current 4 A TC = 50°C, Resistive & inductive load
3.2 TC = 50°C, Capacitive load
IFSM Maximum peak, one-cycle 150 t = 10ms, 20ms
non-repetitive surge current,
following any rated load condition 158 t =8.3ms, 16.7ms T,-- 150°C
and with rated VRRM reapplied
Pt Maximum Pt for fusing, 113 A25 t=10ms
initial TJ=TJ max 104 t=8.3ms
VFM Maximum peak forward voltage 0S75 V T, = 25°C, Iss, =4A
per diode
IRM Typical peak reverse leakage 5 pA T J = 25 oc, 100% VRRM
current per diode
VRRM Maximum repetitive peak 50 to 800 V
reverse voltage range
Thermal and Mechanical Specifications
Parameters 4GBL Unit Conditions
T J Operating and storage -55 to 150 °C
Tstg temperature range
Rch Max.thermal resistance 6.5 "C/W DC rated current through bridge (1)
junction to case
RthJA Thermal resistance, 22 °C/W DC rated current through bridge (1)
junction to ambient
W Approximate weight 2 (0.07) g (oz)
Note (1): Devices mounted on 75 x 75 x 3 mm aluminum plate
