BF1201R ,N-channel dual-gate MOSFETapplications with(SOT143R).3 to 9 V supply voltage, such asdigital and analogue televisiontuners an ..
BF1201R ,N-channel dual-gate MOSFETLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BF1201R ,N-channel dual-gate MOSFETFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns3 4forward t ..
BF1201WR ,N-channel dual-gate PoLo MOS-FETsLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BF1202R ,N-channel dual-gate PoLo MOS-FETsapplications with(SOT143R).3 to 9 V supply voltage, such asdigital and analogue televisiontuners an ..
BF1202R ,N-channel dual-gate PoLo MOS-FETs
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BF1201R
N-channel dual-gate MOSFET
NXP Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1201; BF1201R;
BF1201WR
FEATURES Short channel transistor with high
forward transfer admittance to input
capacitance ratio Low noise gain controlled amplifier Partly internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good stabilization.
APPLICATIONS VHF and UHF applications with to9 V supply voltage, such as
digital and analogue television
tuners and professional
communications equipment.
DESCRIPTIONEnhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1201,
BF1201R and BF1201WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
QUICK REFERENCE DATA
NXP Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1201; BF1201R; BF1201WR
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Note Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
NXP Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1201; BF1201R; BF1201WR
STATIC CHARACTERISTICS =25 C; unless otherwise specified.
Note RG1 connects G1 to VGG =5V.
DYNAMIC CHARACTERISTICSCommon source; Tamb =25 C; VG2-S =4V; VDS =5V; ID=15 mA; unless otherwise specified.
Note Measured in Fig.21 test circuit.
NXP Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1201; BF1201R; BF1201WR
NXP Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1201; BF1201R; BF1201WR
NXP Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1201; BF1201R; BF1201WR
NXP Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1201; BF1201R; BF1201WR
