SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) The part BF987 is a transistor manufactured by Philips. Here are its specifications:

- **Type**: N-channel RF transistor
- **Application**: Designed for VHF/UHF amplifier and oscillator applications
- **Package**: SOT23 (Surface-Mount Device)
- **Maximum Ratings**:
  - **Collector-Base Voltage (VCBO)**: 30V
  - **Collector-Emitter Voltage (VCEO)**: 12V
  - **Emitter-Base Voltage (VEBO)**: 3V
  - **Collector Current (IC)**: 50mA
  - **Total Power Dissipation (Ptot)**: 250mW
- **Electrical Characteristics**:
  - **Transition Frequency (fT)**: 500MHz (typical)
  - **Noise Figure (NF)**: 1.5dB (typical at 100MHz)
  - **Gain (hFE)**: 20-200 (at IC = 1mA, VCE = 10V)
- **Operating Temperature Range**: -55°C to +150°C

These specifications are based on Philips' datasheet for the BF987 transistor.

SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) The part BF987 is manufactured by Siemens. No additional specifications about this part are provided in Ic-phoenix technical data files.

SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) The part BF987 is manufactured by Siemens. However, specific technical specifications for BF987 are not provided in Ic-phoenix technical data files. For detailed specifications, please refer to Siemens' official documentation or contact their support directly.