BLF647 ,UHF power LDMOS transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
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BLF647
UHF power LDMOS transistor
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
FEATURES High power gain Easy power control Excellent ruggedness Source on underside eliminates DC isolators, reducing
common mode inductance Designed for broadband operation (HF to 800 MHz) Internal input damping for excellent stability over the
whole frequency range.
APPLICATIONS Communication transmitter applications in theto 800 MHz frequency range.
DESCRIPTIONSilicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
PINNING - SOT540A
QUICK REFERENCE DATARF performance at Th =25 °C in a common source test circuit.
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
THERMAL CHARACTERISTICS
CHARACTERISTICS =25 °C per section unless otherwise specified.
Note Capacitance values of the die only.
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
APPLICATION INFORMATIONRF performance in a common source class-AB circuit. Th =25 °C; Rth mb-h= 0.2 K/W, unless otherwise specified.
Ruggedness in class-AB operationThe BLF647is capableof withstandinga load mismatch correspondingto VSWR=10:1 throughall phases under the
following conditions: VDS=28 V; f= 100 MHz at rated load power.
The BLF647 is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions.
Impedances (per section)At f= 600 MHz, PL= 120 W, VDS=28 V and IDQ=1 A: Zin= 1.0+ j2.0 Ω and ZL= 2.7+ j0.7Ω.
At f= 800 MHz, PL= 150 W, VDS=32 V and IDQ=1 A: Zin= 1.0+ j3.8 Ω and ZL= 1.8+ j0.7Ω.
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
Application at 600 MHz
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
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Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
List of components class-AB 600 MHz test circuit (see Figs6 and7)
Notes American Technical Ceramics type 100A or capacitor of same quality. American Technical Ceramics type 180R or capacitor of same quality. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (εr= 2.2); thickness 0.79 mm.
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF647
