BSR18A ,PNP General Purpose Amplifierapplications at collector currents of 10 µ A to 100mA. Sourced from Process 66.Absolute Maximum Ra ..
BSR18A ,PNP General Purpose AmplifierBSR18ABSR18ACESOT-23BMark: T92PNP General Purpose AmplifierThis device is designed as a general pur ..
BSR18A ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations.3) All voltages (V) and currents (A) are ..
BSR19 ,NPN high-voltage transistors
BSR19 ,NPN high-voltage transistors
BSR19A ,NPN high voltage transistorsapplications.DESCRIPTIONhandbook, halfpage3NPN high-voltage transistor in a SOT23 plastic package. ..
BZT03-C91 ,Voltage regulator diodes
BZT03-C91 ,Voltage regulator diodes
BZT03D15 ,Silicon Z-Diodes and Transient Voltage SuppressorsApplications94 9539Medium power voltage regulators and medium power transient suppression circuits
BZT03-D15 ,Silicon Z-Diodes and Transient Voltage SuppressorsFeatures
BSR18A
PNP General Purpose Amplifier
BSR18A BSR18A C E SOT-23 B Mark: T92 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switching applications at collector currents of 10 μA to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 40 V 3 CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 200 mA C T , T Operating and Storage Junction Temperature Range -55 to +150 °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units *BSR18A P Total Device Dissipation 350 mW D 2.8 Derate above 25°C mW/°C R Thermal Resistance, Junction to Ambient 357 °C/W θJA *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997
