BSR56 ,N-Channel Low-Frequency Low-Noise Amplifier
BSR56 ,N-Channel Low-Frequency Low-Noise AmplifierBSR56BSR56N-Channel Low-Frequency Low-Noise 3Amplifier• This device is designed for low-power chopp ..
BSR56 ,N-Channel Low-Frequency Low-Noise AmplifierBSR56BSR56N-Channel Low-Frequency Low-Noise 3Amplifier• This device is designed for low-power chopp ..
BSR57 ,N-Channel Low-Frequency Low-Noise AmplifierBSR57BSR57N-Channel Low-Frequency Low-Noise 3Amplifier This device is designed for low-power chopp ..
BSR58 ,N-channel FET
BSR58 ,N-channel FET
BZT52-B8V2S , SURFACE MOUNT SILICON ZENER DIODES
BZT52C10S , Planar Die Construction Ultra-Small Surface Mount Package
BZT52C10S , Planar Die Construction Ultra-Small Surface Mount Package
BZT52C11 , Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden fur die Oberflahenmontage
BZT52-C11 , SURFACE MOUNT SILICON ZENER DIODES
BZT52-C11 , SURFACE MOUNT SILICON ZENER DIODES
BSR56
N-Channel Low-Frequency Low-Noise Amplifier
BSR56 BSR56 N-Channel Low-Frequency Low-Noise 3 Amplifier • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 1 Mark: M4 1. Drain 2. Source 3. Gate Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Drain-Gate Voltage 40 V DGO V Gate-Source Voltage - 40 V GSO I Forward Gate Current 50 mA GF P Total Power Dissipation up to T =40°C 250 mW tot amb T Storage Temperature Range - 55 ~ 150 °C STG T Junction Temperature 150 °C J Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Gate-Source Voltage V = 0V, I = 1μA40 V GSS DS C I Gate Reverse Current V = 20V 1 nA GSS GS I Zero-Gate Voltage Drain Current V = 15V, V = 0V 50 mA DSS DS GS V (off) Gate-Source Cut-off Voltage V = 15V, I = 0.5nA 4 10 V GS DS D V (on) Drain-Source On Voltage V = 0V, I = 20mA 750 mV DS GS D r (on) Drain-Source On Reverse V = 0V, I = 0 25 Ω ds GS D C Reverse Transfer Capacitance V = 10V, V = 0V 5 pF rss DS GS t Delay Time V = 10V, V (on) = 0V 6nS d DD GS I = 20mA, V (off) = 10V t Rise Time D GS 3nS r t Turn-off Time 25 nS off ©2001 Rev. A, September 2001
