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BTA204-800E
3Q Hi-Com Triac
Product profile1.1 General descriptionPlanar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic
package. This "series E" triac balances the requirements of commutation performance
and gate sensitivity and is intended for interfacing with low power drivers and logic ICs
including microcontrollers.
1.2 Features and benefits 3Q technology for improved noise
immunity Direct triggering from low power
drivers and logic ICs High blocking voltage capability High commutation capability Planar passivated for voltage
ruggedness and reliability Sensitive gate for easy logic level
triggering Triggering in three quadrants only
1.3 Applications AC solenoids General purpose motor control Home appliances
1.4 Quick reference data A204-800E
3Q Hi-Com Triac
Rev. 5 — 9 May 2011 Product data sheet
Table 1. Quick reference dataVDRM repetitive peak off-state
voltage
--800 V
ITSM non-repetitive peak
on-state current
full sine wave; Tj(init) =25°C; =20 ms; see Figure 4;
see Figure 5
--25 A
IT(RMS) RMS on-state current full sine wave; Tmb≤ 107 °C;
see Figure 1; see Figure 2;
see Figure 3
--4 A
NXP Semiconductors BTA204-800E
3Q Hi-Com Triac Pinning information Ordering information
Static characteristicsIGT gate trigger current VD =12V; IT= 0.1 A; T2+ G+; =25°C; see Figure 7
--10 mA =12V; IT= 0.1 A; T2+ G-; =25°C; see Figure 7
--10 mA =12V; IT= 0.1 A; T2- G-; =25°C; see Figure 7
--10 mA
Table 1. Quick reference data …continued
Table 2. Pinning information T1 main terminal 1
SOT78 (TO-220AB) T2 main terminal 2 G gate T2 mounting base; main terminal 2
Table 3. Ordering informationBTA204-800E TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
NXP Semiconductors BTA204-800E
3Q Hi-Com Triac Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDRM repetitive peak off-state voltage - 800 V
IT(RMS) RMS on-state current full sine wave; Tmb≤ 107 °C; see Figure 1;
see Figure 2; see Figure 3 A
ITSM non-repetitive peak on-state
current
full sine wave; Tj(init) =25°C; tp=20 ms;
see Figure 4; see Figure 5
-25 A
full sine wave; Tj(init) =25°C; tp= 16.7 ms - 27 A2 tI2 t for fusing tp=10 ms; sine-wave pulse - 3.1 A2s
dIT/dt rate of rise of on-state current IT =6A; IG= 0.2 A; dIG/dt= 0.2 A/µs - 100 A/µs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
NXP Semiconductors BTA204-800E
3Q Hi-Com Triac
NXP Semiconductors BTA204-800E
3Q Hi-Com Triac
NXP Semiconductors BTA204-800E
3Q Hi-Com Triac Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to
mounting base
full cycle; see Figure 6 --3 K/W
half cycle; see Figure 6 --3.7 K/W
Rth(j-a) thermal resistance from junction to
ambient
in free air - 60 - K/W
NXP Semiconductors BTA204-800E
3Q Hi-Com Triac Characteristics
Table 6. Characteristics
Static characteristicsIGT gate trigger current VD =12V; IT= 0.1 A; T2+ G+; =25 °C; see Figure 7
--10 mA =12V; IT= 0.1 A; T2+ G-; =25 °C; see Figure 7
--10 mA =12V; IT= 0.1 A; T2- G-; =25 °C; see Figure 7
--10 mA latching current VD =12V; IG=0.1 A; T2+ G+; =25 °C; see Figure 8
--12 mA =12V; IG=0.1 A; T2+ G-; =25 °C; see Figure 8
--18 mA =12V; IG=0.1 A; T2- G-; =25 °C; see Figure 8
--12 mA holding current VD =12V; Tj=25 °C; see Figure 9 --12 mA on-state voltage IT =5A; Tj =25°C; see Figure 10 -1.4 1.7 V
VGT gate trigger voltage VD =12V; IT =0.1 A; Tj =25°C;
see Figure 11
-0.7 1.5 V =400 V; IT= 0.1 A; Tj= 125 °C;
see Figure 11
0.25 0.4 - V off-state current VD =800 V; Tj= 125°C - 0.1 0.5 mA
Dynamic characteristicsdVD/dt rate of rise of off-state voltage VDM= 536 V; Tj =125 °C;
exponential waveform; gate open
circuit --V/µs
dIcom/dt rate of change of commutating
current =400 V; Tj= 125 °C;
IT(RMS) =4A; dVcom/dt=10 V/µs;
gate open circuit
2.1 --A/ms =400 V; Tj= 125 °C;
IT(RMS) =4A; dVcom/dt= 0.1 V/µs;
gate open circuit --A/ms
tgt gate-controlled turn-on time ITM =12A; VD =800 V; IG =0.1A;
dIG/dt=5 A/µs -µs
