IC Phoenix
 
Home ›  BB32 > BTS712N1,Smart Four Channel Highside Power Switch
BTS712N1 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
BTS712N1Infineon ?N/a3113avaiSmart Four Channel Highside Power Switch


BTS712N1 ,Smart Four Channel Highside Power SwitchGeneral Description N channel vertical power FET with charge pump, ground referenced CMOS compatibl ..
BTS716G ,Smart High Side SwitchesGeneral Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS comp ..
BTS716GB , Smart High-Side Power Switch Four Chanmels : 4 x 140mΩ Status Feedback
BTS721L1 ,Smart Four Channel Highside Power SwitchFeatures • Product Summary Overload protection • Current limitation Overvoltage Protection V 43 V ..
BTS721L1 ,Smart Four Channel Highside Power SwitchGeneral Description N channel vertical power FET with charge pump, ground referenced CMOS compatibl ..
BTS721L1 ,Smart Four Channel Highside Power SwitchGeneral Description N channel vertical power FET with charge pump, ground referenced CMOS compatibl ..
BZX84C9V1 ,Voltage regulator diodesFEATURES PINNING• Total power dissipation:PIN DESCRIPTIONmax. 250 mW1 anode• Three tolerance series ..
BZX84-C9V1 ,Voltage regulator diodesGeneral descriptionLow-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted D ..
BZX84C9V1L ,Small Signal +5% 9.1VElectrical Characteristics table on page 3 ofthis data sheet. Semiconductor Components Industries, ..
BZX84C9V1LT1 ,SEMICONDUCTOR(TECHNICAL DATA)Features• Pb−Free Packages are Available• 225 mW Rating on FR−4 or FR−5 Board3• Zener Breakdown Vol ..
BZX84C9V1LT3 ,Small Signal +5% 9.1Vmount plastic SOT−23 package. These devices are designed to providevoltage regulation with minimum ..
BZX84C9V1W-7-F , 200mW SURFACE MOUNT ZENER DIODE


BTS712N1
Smart Four Channel Highside Power Switch
PROFET® BTS712N1 Smart Four Channel Highside Power Switch
Features

• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
(including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Application

• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits
General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
Pin Definitions and Functions

Product Summary

Pin configuration (top view) bb Vbb
GND1/2 Vbb
IN1 OUT1
ST1/2 OUT2
IN2 Vbb
GND3/4 Vbb
IN3 OUT3
ST3/4 OUT4
IN4 Vbb bb Vbb
BTS712N1
Block diagram

Four Channels; Open Load detection in off state;
+ Vbb
IN1
ST1/2ESD
OUT1
Logic
Voltage
sensor
Voltagesource
Open load
detection 1
Short to Vbb
Level shifter
Temperature
sensor 1
Rectifier 1
Limit for
unclamped
ind. loads 1
Gate 1protection
Current
limit 1Logic
Overvoltageprotection
OUT2
Open load
detection 2Short to Vbb
Level shifter
Temperature
sensor 2
Rectifier 2
Limit forunclamped
ind. loads 2
Gate 2
protectionCurrent
limit 2
IN25Charge
pump 1
Charge
pump 2
Channel 2
Channel 1
Signal GND
GND1/22
Chip 1Chip 1
+ Vbb
IN3
ST3/4
PROFET

OUT3
OUT4
IN49
Channel 4
Channel 3
Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20
Leadframe
Load GND
Load

Leadframe
Load GND
Load

Signal GND
GND3/46
Chip 2Chip 2
Logic and protection circuit of chip 2
(equivalent to chip 1)
BTS712N1
Maximum Ratings at Tj = 25°C unless otherwise specified

Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input
protection is integrated.
3) RI = internal resistance of the load dump test pulse generator
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
BTS712N1 Electrical Characteristics
Load Switching Capabilities and Characteristics
Operating Parameters


BTS712N1
Protection Functions10)
Reverse Battery
Diagnostic Characteristics

Add IST, if IST > 0
10) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
11) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest ON(CL)
12) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
BTS712N1
Input and Status Feedback13)


13) If ground resistors RGND are used, add the voltage drop across these resistors.
BTS712N1
Truth Table

L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and
outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4
have to be configured as a 'Wired OR' function with a single pull-up resistor.

14) With additional external pull up resistor
15) An external short of output to Vbb in the off state causes an internal current from output to ground. If RGND is
BTS712N1
Terms
PROFET
IN2
ST1/2
OUT2
GND1/2bb
VOUT2IGND1/2ON2
Leadframe
IN1OUT1ON1
IL1
OUT1IN1VIN2VST1/2
IbbIN1IN2
IST1/2IL2GND1/2bb
Chip 1
PROFET
IN4
ST3/4
OUT4
GND3/4bb
VOUT4IGND3/4ON4
Leadframe
IN3OUT3ON3L3OUT3IN3VIN4VST3/4IN3IN4
IST3/4IL4GND3/4
Chip 2
Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20
External RGND optional; two resistors RGND1/2 ,RGND3/4 = 150 Ω or a single resistor RGND = 75 Ω for
reverse battery protection up to the max. operating voltage
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED