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Partno	Mfg	Dc	Qty	Available	Descript
BUK7909-75AIE \|BUK790975AIE	PH	N/a	54	avai	N-channel TrenchPLUS standard level FET

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BUK7909-75AIE
N-channel TrenchPLUS standard level FET
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
Rev. 02 — 17 February 2009 Product data sheet Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed
and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits Electrostatically robust due to
integrated protection diodes Low conduction losses due to low
on-state resistance Q101 compliant Reduced component count due to
integrated current sensor Suitable for standard level gate drive
sources
1.3 Applications Electrical Power Assisted Steering
(EPAS) Variable Valve Timing for engines
1.4 Quick reference data
[1] Current is limited by power dissipation chip rating.
Table 1. Quick reference
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 75 V drain current VGS =10V; Tmb =25°C;
see Figure 2; see Figure 3
[1] - - 120 A
Static characteristics
RDSon drain-source
on-state resistance
VGS =10V; ID =50A; =25 °C; see Figure 7;
see Figure 8 89mΩ
ID/Isense ratio of drain current
to sense current >-55 °C; Tj< 175 °C;
VGS >10V
450 500 550
NXP Semiconductors BUK7909-75AIE
N-channel TrenchPLUS standard level FET Pinning information Ordering information
Table 2. Pinning information gate
SOT263B
(TO-220) ISENSE sense current drain KS Kelvin source source D mounting base; connected to
drain245
MBL368Isense Kelvin source
Table 3. Ordering information
BUK7909-75AIE TO-220 plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead
TO-220
SOT263B
NXP Semiconductors BUK7909-75AIE
N-channel TrenchPLUS standard level FET Limiting values
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 75 V
VDGS drain-gate voltage - 75 V
VGS gate-source voltage -20 20 V drain current Tmb =25°C; VGS =10V; see Figure 2; see Figure 3 [1] -120 A
[2] -75 A
Tmb =100 °C; VGS=10 V; see Figure 2 [2] -75 A
IDM peak drain current Tmb =25°C; tp≤10 µs; pulsed; see Figure 3 -480 A
Ptot total power dissipation Tmb =25°C; see Figure 1 -272 W
IGS(CL) gate-source clamping
current
continuous - 10 mA
pulsed; tp =5ms; δ 0.01 - 50 mA
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C [1] -120 A
[2] -75 A
ISM peak source current tp≤10 µs; pulsed; Tmb =25°C - 480 A
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source avalanche
energy =75A; Vsup≤75 V; RGS =50 Ω; VGS =10V;
Tj(init)=25 °C; unclamped
-739 mJ
Electrostatic discharge
Vesd electrostatic discharge
voltage
HBM; C= 100 pF; R= 1.5kΩ -6 kV
NXP Semiconductors BUK7909-75AIE
N-channel TrenchPLUS standard level FET
NXP Semiconductors BUK7909-75AIE
N-channel TrenchPLUS standard level FET Thermal characteristics
Table 5. Thermal characteristics
Rth(j-a) thermal resistance from
junction to ambient
vertical in still air - 60 - K/W
Rth(j-mb) thermal resistance from
junction to mounting base
see Figure 4 - - 0.55 K/W
NXP Semiconductors BUK7909-75AIE
N-channel TrenchPLUS standard level FET CharacteristicsTable 6. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0V; Tj =25°C 75 - - V =0.25mA; VGS =0V; Tj =-55°C 70 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS = VGS; Tj =25°C;
see Figure 9
234 V =1mA; VDS = VGS; Tj= 175 °C;
see Figure 9 - V =1mA; VDS = VGS; Tj =-55 °C;
see Figure 9
--4.4 V
IDSS drain leakage current VDS =75V; VGS =0V; Tj =25°C - 0.1 10 µA
VDS =75V; VGS =0V; Tj= 175°C - - 250 µA
V(BR)GSS gate-source breakdown
voltage =1mA; VDS =0V; Tj >-55 °C; < 175°C 22 - V =-1mA; VDS =0V; Tj >-55 °C; < 175°C 22 - V
IGSS gate leakage current VDS =0V; VGS =10V; Tj=25°C - 22 1000 nA
VDS =0V; VGS =-10 V; Tj=25°C - 22 1000 nA
VDS =0V; VGS =10V; Tj= 175°C --10 µA
VDS =0V; VGS =-10 V; Tj= 175°C --10 µA
RDSon drain-source on-state
resistance
VGS =10V; ID =50A; Tj =25°C;
see Figure 7; see Figure 8 9 mΩ
VGS =10V; ID =50A; Tj= 175 °C;
see Figure 7; see Figure 8
--19 mΩ
ID/Isense ratio of drain current to
sense current
VGS >10V; Tj >-55 °C; Tj< 175°C 450 500 550
Dynamic characteristics
QG(tot) total gate charge ID =25A; VDS =60V; VGS =10V; =25°C; see Figure 14 121 - nC
QGS gate-source charge - 20 - nC
QGD gate-drain charge - 44 - nC
Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; =25°C; see Figure 12 4700 - pF
Coss output capacitance - 800 - pF
Crss reverse transfer
capacitance 455 - pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10V;
RG(ext) =10 Ω; Tj =25°C
-35 - ns rise time - 108 - ns
td(off) turn-off delay time - 185 - ns fall time - 100 - ns internal drain
inductance
measured from upper edge of drain
mounting base to centre of die; Tj =25°C
-2.5 - nH internal source
measured from source lead to source
-7.5 - nH
NXP Semiconductors BUK7909-75AIE
N-channel TrenchPLUS standard level FET
Source-drain diode
VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C;
see Figure 16 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs; VGS =-10V;
VDS =30V; Tj =25°C
-75 - ns recovered charge - 270 - nC
Table 6. Characteristics …continued

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