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BUZ21L from SIEMENS

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BUZ21L

Manufacturer: SIEMENS

N-Channel SIPMOS Power Transistor

Partnumber Manufacturer Quantity Availability
BUZ21L SIEMENS 500 In Stock

Description and Introduction

N-Channel SIPMOS Power Transistor The BUZ21L is a power MOSFET manufactured by SIEMENS. Here are its specifications:  

- **Type**: N-channel enhancement mode MOSFET  
- **Drain-Source Voltage (VDSS)**: 60V  
- **Continuous Drain Current (ID)**: 17A  
- **Pulsed Drain Current (IDM)**: 68A  
- **Power Dissipation (Ptot)**: 75W  
- **Gate-Source Voltage (VGS)**: ±20V  
- **On-Resistance (RDS(on))**: 0.08Ω (max) at VGS = 10V  
- **Turn-On Delay Time (td(on))**: 10ns (typical)  
- **Rise Time (tr)**: 30ns (typical)  
- **Turn-Off Delay Time (td(off))**: 60ns (typical)  
- **Fall Time (tf)**: 20ns (typical)  
- **Package**: TO-220  

These are the factual specifications of the BUZ21L MOSFET from SIEMENS.

Partnumber Manufacturer Quantity Availability
BUZ21L TSC 339 In Stock

Description and Introduction

N-Channel SIPMOS Power Transistor The BUZ21L is manufactured by TSC (Taiwan Semiconductor). Here are the key specifications:

- **Type**: N-Channel Power MOSFET
- **Drain-Source Voltage (VDS)**: 60V
- **Continuous Drain Current (ID)**: 17A
- **Pulsed Drain Current (IDM)**: 68A
- **Power Dissipation (PD)**: 75W
- **Gate-Source Voltage (VGS)**: ±20V
- **On-Resistance (RDS(on))**: 0.04Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th))**: 2-4V
- **Input Capacitance (Ciss)**: 1200pF (typ)
- **Operating Temperature Range**: -55°C to +150°C
- **Package**: TO-220AB

These specifications are based on standard testing conditions.

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