BYW29E-150 ,Ultrafast power diodeLIMITING VALUESYMBOL PARAMETER CONDITIONS MIN. MAX. UNITV Electrostatic discharge Human body model; ..
BYW29E-150 ,Ultrafast power diodeLIMITING VALUESYMBOL PARAMETER CONDITIONS MIN. MAX. UNITV Electrostatic discharge Human body model; ..
BYW29E-150 ,Ultrafast power diodeGENERAL DESCRIPTION PINNING SOD59 (TO220AC)Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTIONta ..
BYW29E-150 ,Ultrafast power diodeLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
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BYW29E-150
Ultrafast power diode
TO-220AC BYW29E-150
Ultrafast power diode17 September 2013 Product data sheet General descriptionUltrafast power diode in a SOD59 (2-lead TO-220AC) plastic package.
Features and benefits Fast switching• Guaranteed ESD capability• High thermal cycling performance• Low on-state loss• Low thermal resistance• Rugged: reverse voltage surge capability• Soft recovery minimizes power-consuming oscillations
Applications Output rectifiers in high-frequency switched-mode power supplies
Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max UnitVRRM repetitive peak reversevoltage - - 150 V
IF(AV) average forwardcurrent δ = 0.5 ; Tmb ≤ 128 °C; square-wave
pulse; Fig. 1; Fig. 2 - 8 A
Static characteristics - 0.92 1.05 V
Dynamic characteristicstrr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; ramp recovery; Fig. 5; Fig. 7 20 25 ns
Electrostatic dischargeVESD electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 kΩ - - 8 kV
NXP Semiconductors BYW29E-150
Ultrafast power diode Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol K cathode A anode mb mounting base; cathode 2
TO-220AC (SOD59)001aaa020K
Ordering information
Table 3. Ordering information
PackageType number
Name Description VersionBYW29E-150 TO-220AC plastic single-ended package; heatsink mounted; 1 mountinghole; 2-lead TO-220AC SOD59
Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max UnitVRRM repetitive peak reverse voltage - 150 V
VRWM crest working reverse voltage - 150 V reverse voltage - 150 V
IF(AV) average forward current δ = 0.5 ; Tmb ≤ 128 °C; square-wave
pulse; Fig. 1; Fig. 2 8 A
IFRM repetitive peak forward current δ = 0.5 ; tp = 25 µs; Tmb ≤ 128 °C;
square-wave pulse 16 A
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave
pulse 88 AIFSM non-repetitive peak forward
current
tp = 10 ms; Tj(init) = 25 °C; sine-wave
pulse 80 A - 0.2 A
NXP Semiconductors BYW29E-150
Ultrafast power diode
Symbol Parameter Conditions Min Max UnitIRSM non-repetitive peak reversecurrent tp = 100 µs - 0.2 A
Tstg storage temperature -40 150 °C junction temperature - 150 °C
Electrostatic dischargeVESD electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kΩ - 8 kV
003aaj507
IF(AV) (A)0 1284
Ptot
(W)
δ = 1
Fig. 1. Forward power dissipation as a function ofaverage forward current; square waveform;
maximum values
IF(AV) (A)0 862 4
003aaj508
Ptot(W)
a = 1.57
Fig. 2. Forward power dissipation as a function of average forward current; sinusoidal waveform;
maximum values Thermal characteristics Min Typ Max Unit - - 2.7 K/W - 60 - K/W
NXP Semiconductors BYW29E-150
Ultrafast power diode003aaj513
Zth(j-mb)
(K/W)
tp (s)10-6 1 1010-110-210-5 10-310-4δ=
Fig. 3. Transient thermal impedance from junction to mounting base as a function of pulse width Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristicsIF = 8 A; Tj = 25 °C; Fig. 4 - 0.92 1.05 V
IF = 20 A; Tj = 25 °C; Fig. 4 - 1.1 1.3 V forward voltage
IF = 8 A; Tj = 150 °C; Fig. 4 - 0.8 0.895 V
VR = 150 V; Tj = 25 °C - 2 10 µAIR reverse current
VR = 150 V; Tj = 100 °C - 0.2 0.6 mA
Dynamic characteristics recovered charge IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs;
Tj = 25 °C; Fig. 5; Fig. 6 4 11 nC
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; ramp recovery; Fig. 5; Fig. 7 20 25 nstrr reverse recovery time
IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A;
Tj = 25 °C; step recovery; Fig. 8 15 20 ns - V
NXP Semiconductors BYW29E-150
Ultrafast power diodeVF (V)0 21.50.5 1
003aaj509(A)
(1) (2) (3)
Fig. 4. Forward current as a function of forward
voltage003aac562
trr
time
100%% dlF IRM
Fig. 5. Reverse recovery definitions; ramp recovery003aaj5102
103(nC)
(1)
(2)
(3)
(4)
003aaj5112
trr(ns)
dIF1 10210
(1)
(2)
Fig. 7. Reverse recovery time as a function of rate of
change of forward current; maximum values
NXP Semiconductors BYW29E-150
Ultrafast power diode003aac563
trr
time
0.25xIR
Fig. 8. Reverse recovery definitions; step recovery 001aab912
time
time
VFRM
Fig. 9. Forward recovery definitions
