DSF05S30U ,Small-signal Schottky barrier diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
DSF10TE ,1.0A Power RectifierAbsolute Maximum Ratings at Ta = 25°C DSFlOTB DSFIOTE DSFIOTG unitPeak Reverse Voltage VRM 100 400 ..
DSF521 ,Small-signal Schottky barrier diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
DSF521CT ,Small-signal Schottky barrier diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
DSI30-08A , Standard Rectifier
DSK16 , SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
ED1402 ,NPN general purpose transistor
ED1402B ,NPN general purpose transistor
ED1402B ,NPN general purpose transistor
ED1402C ,NPN general purpose transistor
ED1402C ,NPN general purpose transistor
ED1402E ,NPN general purpose transistor
DSF05S30U
Small-signal Schottky barrier diode
DSF05S30U TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSF05S30U High Speed Switching Application
Absolute Maximum Ratings (Ta = 25°C) *: Mounted on a glass-epoxy circuit board of 20 × 20 mm,
pad dimensions of 4 × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Marking Equivalent Circuit (top view) Weight: 4.5 mg (typ.)
Unit: mm
