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ESDA14V2-4BF1 |ESDA14V24BF1STMN/a40avaiQUAD BIDIRECTIONAL TRANSIL ARRAY FOR ESD PROTECTION


ESDA14V2-4BF1 ,QUAD BIDIRECTIONAL TRANSIL ARRAY FOR ESD PROTECTIONPIN CONFIGURATION (Ball Side)COMPLIES WITH THE FOLLOWING STANDARDS:312- IEC61000-4-2: 15 kV (air di ..
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ESDA14V2-4BF1
QUAD BIDIRECTIONAL TRANSIL ARRAY FOR ESD PROTECTION
ESDA14V2-4BF1
QUAD BIDIRECTIONAL TRANSIL™ ARRAY
FOR ESD PROTECTION
DESCRIPTION

The ESDA14V2-4BF1 isa monolithic array
designedto protectupto4 linesina bidirectional
way against ESD transients.
The deviceis ideal for situations where board
space savingis requested.
Where transient overvoltage protectionin ESD
sensitive equipmentis required, suchas: Computers Printers Communication systems and cellular phones Video equipment
This deviceis particularly adaptedto the protection symmetrical signals.
APPLICATIONS
FUNCTIONAL DIAGRAM

A.S.D™ High ESD protection level High integration Suitablefor high density boards
BENEFITS
IEC61000-4-2:15kV (air discharge)kV (contact discharge) MIL STD 883E-Method 3015-7: class3
25kV (Human Body Model)
COMPLIES WITH THE FOLLOWING STANDARDS:
4 Bidirectional Transil™ functions ESD Protection: IEC61000-4-2 level4 Standoff voltage: 12V MIN. Low leakage current<1 μA 50W Peak pulse power( 8/20)
FEATURES
PIN CONFIGURATION (Ball Side)
ESDA14V2-4BF1
Note1:
Variationof parameterswillbe given inthe final datasheet
ABSOLUTE RATINGS
(Tamb= 25°C)
ELECTRICAL CHARACTERISTICS
(Tamb= 25°C)
Note1:
Square pulse,IPP=3A, tp= 2.5μs
Note2:
ΔVBR= αT(Tamb-25°C)x VBR(25°C)
ESDA14V2-4BF1
10.0 10 203040 5060
Ipp(A)
Fig.1:
Clamping voltage versus peak pulse current
(Tj initial= 25°C) Rectangular waveform tp= 2.5μs.
02468 10 12 14
C(pF)
Fig.2:
Capacitance versus reverse applied voltage
(typical values).
1000 50 75 100 125
IR[Tj] / IR[Tj=25°C]
Fig.3:
Relative variationof leakage current versus
junction temperature (typical values).
APPLICATION EXAMPLE
ESDA14V2-4BF1
With the focusof lowering the operation levels, the problemof malfunction causedby the environmentis
critical. Electrostatic discharge (ESD)isa major causeof failurein electronic systems.a transient voltage suppressor, ESDA14V2-4BF1is an ideal choicefor ESD protectionby suppressing
ESD events.Itis capableof clamping the incoming transienttoa low enough level such that any damageis
preventedon the device protectedby ESDA14V2-4BF1.
ESDA14V2-4BF1 servesasa parallel protection elements, connected between the signal line and ground. the transient rises above the operating voltageof the device, the ESDA14V2-4BF1 becomesa low
impedance path diverting the transient currentto ground.
The clamping voltageis givenby the following formula: RICL BR dpp=+ . shownin figure A1, the ESD strikes are clampedby the transient voltage suppressor. ESD protectionby ESDA14V2- 4BF1
TECHNICAL INFORMATION
Fig. A1:
ESD clamping behavior havea good approximationof the remaining voltagesat both Vi/o side, we provide the typical dynamical
resistance value Rd.By taking into account the following hypothesis: >Rd and Rload>Rd have: o V R V d(/) =+ ×
The resultsof the calculation doneforVg=8 kV,Rg= 330Ω (IEC 61000-4-2 standard), VBR= 14.2V (min.)
andRd= 3.2Ω (typ.) give:
V(i/o)= 91.8V
This confirms the very low remaining voltage across the devicetobe protected.Itis also importantto note
thatin this approximation the parasitic inductance effect was not taken into account. This couldbea few
tenthsof volts duringa fewnsat the Vi/o side.
V(i/o)
ESDA14V2-4BF1
Fig. A2:
ESD test board
Fig. A4:
Remaining voltage during ESD surge
Fig. A3:
ESD test configuration
The measurements done here after show very clearly (Fig. A4) the high efficiencyof the ESD protection:
the clamping voltage V(i/o) becomes very closeto +VBR (positive way, Fig. A4a) and -VBR (negative way,
Fig. A4b).
ESDA14V2-4BF1
Fig. A5:
Crosstalk phenomenon
CROSSTALK BEHAVIOR

The crosstalk phenomena are dueto the coupling between2 lines. Coupling factors( β12or β21) increase
when the gap across lines decreases, particularlyin silicon dice.In the example above, the expected
signalon load RL2is α2VG2,in fact the real voltageat this point has gotan extra value β21VG2. This partof
the VG1 signal represents the effectof the crosstalk phenomenonof the line1 on the line2. This
phenomenon hasto be taken into account when the drivers impose fast digital dataor high frequency
analog signals. The perturbed line will be more affectedifit works with low voltage signalor high load
Fig. A6:
Analog crosstalk measurements
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