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ESDA6V1BC6 ST N/a39300avaiTRANSIL SUPPRESSOR FOR ESD PROTECTION


ESDA6V1BC6 ,TRANSIL SUPPRESSOR FOR ESD PROTECTIONFEATURES1 6n 4 BIDIRECTIONAL TRANSIL FUNCTIONSn ESD PROTECTION FOR DATA, SIGNAL AND2 5V BUSCCn STAN ..
ESDA6V1L ,ESD Protection DevicesFEATURESSOT23n 2 UNIDIRECTIONAL TRANSIL FUNCTIONS.n LOW LEAKAGE CURRENT : I max. < 20μAatRV .BRn 30 ..
ESDA6V1P6 ,QUAD TRANSIL ARRAY FOR ESD PROTECTIONFEATURESn 4 UNIDIRECTIONAL TRANSIL™ FUNCTIONS.n BREAKDOWN VOLTAGE V = 6.1V MINBRn LOW LEAKAGE CURRE ..
ESDA6V1S3 ,TRANSIL ARRAY FOR ESD PROTECTIONFEATURESSO20 SSOP2018 UNIDIRECTIONAL TRANSIL™ FUNCTIONSESDA6V1S3 ESDA6V2S6LOW LEAKAGE CURRENT: IR m ..
ESDA6V1S3RL ,TRANSIL ARRAY FOR ESD PROTECTIONFEATURESSO-20 SSOP20n 18 UNIDIRECTIONAL TRANSIL FUNCTIONSESDA6V1S3 ESDA6V2S6n LOW LEAKAGE CURRENT: ..
ESDA6V1S3RL ,TRANSIL ARRAY FOR ESD PROTECTIONAPPLICATIONSWhere transient overvoltage protection in ESDsensitive equipment is required, such as : ..
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ESDA6V1BC6
TRANSIL SUPPRESSOR FOR ESD PROTECTION
ESDA6V1BC6
QUAD BIDIRECTIONAL TRANSIL
SUPPRESSOR FOR ESD PROTECTION
DESCRIPTION

The ESDA6V1BC6isa monolithic array designed protect upto4 linesina bidirectional way
against ESD transients.
The deviceis ideal for situations where board
spaceisata premium.
Where transient overvoltage protectionin ESD
sensitive equipmentis required, suchas: COMPUTERS PRINTERS COMMUNICATION SYSTEMS VIDEO EQUIPMENT
This deviceis particularly adaptedto the protection symmetrical signals.
APPLICATIONS
FUNCTIONAL DIAGRAM

SOT23-6L
Application Specific Discretes
A.S.D.
BENEFITS
High ESD protection level:upto25kV High integration Suitablefor high density boards IEC61000-4-2:15kV (air discharge)kV (contact discharge) MIL STD 883C-Method 3015-6: class3
(human body model)
COMPLIES WITH THE FOLLOWING STANDARDS:
4 BIDIRECTIONAL TRANSIL FUNCTIONS ESD PROTECTION FOR DATA, SIGNAL AND
VCC BUS STAND OFF VOLTAGE RANGE:±5V MIN. LOW LEAKAGE CURRENT<1 μA PEAK PULSE POWER( 8/20)=80W
FEATURES
ESDA6V1BC6
With the focusof lowering the operation levels, the problemof malfunction causedby the environmentis
critical. Electrostatic discharge (ESD)isa major causeof failurein electronic system.
Transient Voltage Suppressors are an ideal choice for ESD protection and have proven capablein
suppressing ESD events. They are capableof clamping the incoming transienttoa low enough level such
that damageto the protected semiconductoris prevented.
Surface mount TVS arrays offer the best choice for minimal lead inductance.
They serveas parallel protection elements, connected between the signal lineto ground.As the transient
rises above the operating voltageof the device, the TVS array becomesa low impedance path diverting the
transient currentto ground. ESD protectionby ESDA6V1BC6
Bidirectional protection for 0V biased signals.

The ESDA6V1BC6 arrayis the ideal product for use as board level protectionof ESD sensitive
semiconductor components.
The tiny SOT23-6L package allows design flexibilityin the designof “crowded” boards where the space
savingisata premium. This enablesto shorten the routing and can contributeto improve ESD
performance. Circuit Board Layout
Circuit board layoutisa critical design stepin the suppressionof ESD induced transients. The following
guidelines are recommended: The ESDA6V1BC6 shouldbe placedas nearas possibleto the input terminalsor connectors. Minimise the path length between the ESD suppressor and the protected device Minimiseall conductive loops, including power and ground loops The ESD transient return pathto ground shouldbe keptas shortas possible. Use ground planes whenever possible.
ESDA6V1BC6
Note 1:Variation
of parametersis givenby curves.
ABSOLUTE MAXIMUM RATINGS
(Tamb= 25°C)
Note1
: Square pulse,Ipp=3A, tp=2.5μs.
ELECTRICAL CHARACTERISTICS
(Tamb= 25°C)
ESDA6V1BC6 25 50 75 100 125 150 1750.0
Ppp[Tj initial]/Ppp[Tj initial=25°C]
Fig. 1: Peak power dissipation versus initial
junction temperature. 10 10010
Ppp(W)
Fig.2: Peak pulse power versus exponential pulse
duration(Tj initial=25 °C). 5 10 15 20 25 30 35 400.1
Ipp(A)
Fig. 3: Clamping voltage versus peak pulse
current(Tj initial=25 °C).
Rectangular waveformtp= 2.5 μs. 234 5 6 7 810
C(pF)
Fig. 4:
Capacitance versus reverse applied
voltage (typical values). 50 75 100 125 1501
IR[Tj] / IR[Tj=25°C]
Fig.5: Relative variationof leakage current versus
junction temperature (typical values).
ESDA6V1BC6
PACKAGE MECHANICAL DATA

SOT23-6L
FOOTPRINT
ORDER CODE
Packaging:
Standard packagingis tape and reel.
MARKING
ESDA6V1BC6
Information furnishedisbelievedto beaccurateand reliable. However, STMicroelectronics assumes noresponsibilityforthe consequencesof
use ofsuch informationnor forany infringement ofpatentsor otherrightsofthirdpartieswhich may result fromitsuse. Nolicenseis grantedby
implicationor otherwise under any patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
changewithout notice. This publication supersedesand replaces allinformation previously supplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
provalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2002 STMicroelectronics- Printedin Italy-All rights reserved.
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