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ESDA6V1S3STN/a2500avaiTRANSIL ARRAY FOR ESD PROTECTION
ESDA6V2S6STN/a780avaiTRANSIL ARRAY FOR ESD PROTECTION


ESDA6V1S3 ,TRANSIL ARRAY FOR ESD PROTECTIONFEATURESSO20 SSOP2018 UNIDIRECTIONAL TRANSIL™ FUNCTIONSESDA6V1S3 ESDA6V2S6LOW LEAKAGE CURRENT: IR m ..
ESDA6V1S3RL ,TRANSIL ARRAY FOR ESD PROTECTIONFEATURESSO-20 SSOP20n 18 UNIDIRECTIONAL TRANSIL FUNCTIONSESDA6V1S3 ESDA6V2S6n LOW LEAKAGE CURRENT: ..
ESDA6V1S3RL ,TRANSIL ARRAY FOR ESD PROTECTIONAPPLICATIONSWhere transient overvoltage protection in ESDsensitive equipment is required, such as : ..
ESDA6V1SC5 ,QUAD TRANSIL ARRAY FOR ESD PROTECTIONFEATURESESDAxxSC6ESDAxxSC5n 4 Unidirectional Transil™ Functionsn Low leakage current: I max. < 20 μ ..
ESDA6V1SC6 ,QUAD TRANSIL ARRAY FOR ESD PROTECTIONAPPLICATIONSWhere transient overvoltage protection in ESDsensitive equipment is required, such as : ..
ESDA6V1U1 ,TRANSIL ARRAY FOR ESD PROTECTIONFEATURESn 6 UNIDIRECTIONAL TRANSIL FUNCTIONSFUNCTIONAL DIAGRAMn LOW LEAKAGE CURRENT: I max. < 2 μAR ..
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ESDA6V1S3-ESDA6V2S6
TRANSIL ARRAY FOR ESD PROTECTION
ESDA6V1S3
ESDA6V2S6

October 1998 Ed: 2A
TRANSIL ARRAY
FOR ESD PROTECTION
Where transient overvoltage protection in ESD
sensitive equipment is required, such as :
- COMPUTERS
- PRINTERS
- COMMUNICATION SYSTEMS
- GSM HANDSETS AND ACCESSORIES
- OTHER TELEPHONE SETS
APPLICATIONS

Application Specific Discretes
A.S.D.
FUNCTIONAL DIAGRAM
BENEFITS

High ESD protection level : up to 25 kV
High integration
Suitable for high density boards
IEC 1000-4-2 : level 4
MIL STD 883C-Method 3015-6 : class3
(human body model)
COMPLIES WITH THE FOLLOWING STANDARDS :

18 UNIDIRECTIONAL TRANSIL FUNCTIONS
LOW LEAKAGE CURRENT: IR max. < 2 μA
200 W PEAK PULSE POWER (8/20 μs)
FEATURES
DESCRITION

The ESDA6xxSx is a monolithic voltage
suppressor designed to protect components which
are connected to data and transmission lines
against ESD.
It clamps the voltage just above the logic level
supply for positive transients, and to a diode drop
below ground for negative transients.
1/7
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Note 1 : Between any I/O pin and Ground
Note 2 : Square pulse, IPP = 25A for ESDA6V1S3 and IPP = 15A for ESDA6V2S6 , tp = 2.5μs
Note 3 : ΔVBR = αT * [Tamb-25] * VBR(25°C)
ESDA6V1S3 / ESDA6V2S6

2/7
The ESDA family has been designed to clamp fast
spikes like ESD. Generally the PCB designers
need to calculate easily the clamping voltage VCL.
This is why we give the dynamic resistance in
addition to the classical parameters. The voltage
across the protection cell can be calculated with
the following formula:
VCL = VBR + Rd IPP
Where Ipp is the peak current through the ESDA cell.
DYNAMIC RESISTANCE MEASUREMENT

The short duration of the ESD has led us to prefer
a more adapted test wave, as below defined, to the
classical 8/20μs and 10/1000μs surges.
2.5μs duration measurement wave.
As the value of the dynamic resistance remains
stable for a surge duration lower than 20μs, the
2.5μs rectangular surge is well adapted. In addition
both rise and fall times are optimized to avoid any
parasitic phenomenon during the measurement of
Rd.
CALCULATION OF THE CLAMPING VOLTAGE
USE OF THE DYNAMIC RESISTANCE
ESDA6V1S3 / ESDA6V2S6

3/7
110 10010
Ppp(W)
Fig. 2 : Peak
pulse power versus exponential
pulse duration (Tj initial = 25 °C). 25 50 75 100 125 1500.0
Ppp[Tj initial]/Pp[Tj initial=25°C]
Fig. 1 : Peak power dissipation
versus initial
junction temperature. 5 1010
C(pF)
Fig. 4 :
Capacitance versus reverse applied
voltage (typical values).68 1012141618 202224262830320.1
Ipp(A)
Fig. 3 : Clamping
voltage versus peak pulse
current (Tj initial = 25 °C).
Rectangular waveform tp = 2.5 μs.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.50.01
5.00 (A)FM voltage drop versus peak 50 75 100 1251
200 [Tj]/I [Tj=25°C]RR
Fig. 5 : Relative variation of leakage current versus

junction temperature (typical values).
ESDA6V1S3 / ESDA6V2S6

4/7
APPLICATION EXAMPLE :
1 - Protection of logic-level signals.

(ex : centronics junction)
2 - Protection of symmetrical signals.
Note : Capacitance value between any I/O pin and

Ground is divided by 2.
Implementing its ASDTM technology, SGS-Thomson
has developed a monolithic TRANSIL diode array,
which is a reliable protection against electrostatic
overloads for computer I/O ports, modems, GSM
handsets and accessories or other similar systems
with data outputs. The ESDAxxSx integrates 18
TRANSIL diodes in a compact package that can be
easily mounted close to the circuitry to be
protected, eliminating the assembly costs
associated with the use of discrete diodes, and
also increasing system reliability.
Each TRANSIL has a breakdown voltage between
6.2V (minimum) and 7.2V (maximum). When the
input voltage is lower than the breakdown voltage,
the diodes present a high impedance to ground.
For short overvoltage pulses, the fast-acting
diodes provide an almost instantaneous response,
clamping the voltage to a safe level.
ESDA6V1S3 / ESDA6V2S6

5/7
Packaging : Preferred packaging is tape and reel.
MARKING : Logo, date code
PACKAGE MECHANICAL DATA

SO20 (Plastic)
ORDER CODE
Weight : 0.55g.
ESDA6V1S3 / ESDA6V2S6

6/7
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