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ESDALC6V1P5SEMITEHN/a3000avaiQUAD LOW CAPACITANCE TRANSIL ARRAY FOR ESD PROTECTION


ESDALC6V1P5 ,QUAD LOW CAPACITANCE TRANSIL ARRAY FOR ESD PROTECTIONFEATURES■ 4 UNIDIRECTIONAL TRANSIL™ FUNCTIONS.■ BREAKDOWN VOLTAGE V = 6.1V MIN.BRFUNCTIONAL DIAGRAM ..
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ESDALC6V1P5
QUAD LOW CAPACITANCE TRANSIL ARRAY FOR ESD PROTECTION
ESDALC6V1P5
QUAD LOW CAPACITANCE TRANSIL™
ARRAY FOR ESD PROTECTION
Where transient overvoltage protectionin ESD
sensitive equipmentis required, suchas: Computers Printers Communication systems and cellular phones Video equipment
This deviceis particularly adapted tothe protection symmetrical signals.
MAIN APPLICATIONS

Application Specific Discretes
A.S.D.
FUNCTIONAL DIAGRAM
4 UNIDIRECTIONAL TRANSIL™ FUNCTIONS. BREAKDOWN VOLTAGE VBR= 6.1V MIN. LOW DIODE CAPACITANCE (12pF@ 0V) LOW LEAKAGE CURRENT< 100 nA VERY SMALL PCB AREA< 2.6 mm2
FEATURES

The ESDALC6V1P5isa monolithic array designed protectupto4 lines against ESD transients.
This deviceis ideal for applications where both
reduced line capacitance and board space saving
are required.
DESCRIPTION
High ESD protection level. High integration. Suitablefor high density boards.
BENEFITS
IEC61000-4-2 level4:15kV (air discharge)kV (contact discharge) MIL STD 883E-Method 3015-7: class3
25kV HBM (Human Body Model)
COMPLIES WITHTHE FOLLOWINGSTANDARDS:
ESD response to IEC61000-4-2 level4 (15kV
contact)
ESDALC6V1P5
ELECTRICAL CHARACTERISTICS
(Tamb= 25°C)
Note1:
fora surge greater thanthe maximum values,the diodewillfailin short-circuit.
ABSOLUTE RATINGS
(Tamb= 25°C)
THERMAL RESISTANCES
ESDALC6V1P5
1.1 25 50 75 100 125 150[T initial] / P[T initial=25°C)PPj PPj
Fig.1:
Relative variationof peak pulse power
versus initial junction temperature.
1000 10 100
P(W)PP
Fig.2:
Peak pulse power versus exponential pulse
duration.
100.0 10 20304050 6070(A)PP
Fig. 3:
Clamping voltage versus peak pulse
current (typical values, rectangular waveform).
1.E-03
1.E-02
1.E-01
1.E+00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (A)FM
Fig.4:
Forward voltage drop versus peak forward
current (typical values).
C(pF) 234 56
Fig. 5:
Junction capacitance versus reverse
voltage applied (typical values).[T] / I [T=25°C]Rj Rj
1000 50 75 100 125
Fig.6:
Relative variationof leakage current versus
junction temperature (typical values).
ESDALC6V1P5
ORDER CODE
ESDALC6V1P5
PACKAGE MECHANICAL DATA

SOT-665
FOOT PRINT
(in millimeters)
Information furnishedisbelieved tobeaccurateand reliable.However, STMicroelectronics assumesnoresponsibilityfortheconsequencesof
use ofsuch informationnorforany infringementofpatentsor otherrightsof third parties which mayresultfromits use.No licenseis grantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
changewithout notice. Thispublication supersedesand replacesall information previouslysupplied. STMicroelectronicsproducts arenotau-
thorizedforuseas critical components inlife support devicesor systems without express written approvalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics.
All other names arethe propertyof their respective owners. 2004 STMicroelectronics-All rights reserved.
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