FDMC510P ,-20V P-Channel PowerTrench?MOSFETGeneral Description Max r = 8.0 mΩ at V = -4.5 V, I = -12 AThis P-Channel MOSFET is produced ..
FDMC5614P ,-60V P-Channel PowerTrench?MOSFETGeneral Description Max r = 100mΩ at V = -10V, I = -5.7AThis P-Channel MOSFET is a rugged gate ver ..
FDMC6675BZ ,-30V P-Channel Power Trench?MOSFETapplicationsGSS Application High performance trench technology for extremely low rDS(on) Load Sw ..
FDMC6679AZ ,-30V P-Channel Power Trench?MOSFETapplications. Advancements in both silicon and Max r = 18 mΩ at V = -4.5 V, I = -8.5 ADS(on) GS ..
FDMC6890NZ ,20V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Type Mi ..
FDMC6890NZ ,20V Dual N-Channel PowerTrench?MOSFETfeatures two Max r = 100mΩ at V = 2.5V, I = 3ADS(on) GS DN-channel MOSFETs with low on-state res ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMC510P
-20V P-Channel PowerTrench?MOSFET
® FDMC510P P-Channel PowerTrench MOSFET June 2010 FDMC510P ® P-Channel PowerTrench MOSFET -20 V, -18 A, 8.0 mΩ Features General Description Max r = 8.0 mΩ at V = -4.5 V, I = -12 A This P-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor’s advanced Power Trench process that has Max r = 9.8 mΩ at V = -2.5 V, I = -10 A DS(on) GS D been optimized for r , switching performance and DS(ON) Max r = 13 mΩ at V = -1.8 V, I = -9.3 A ruggedness. DS(on) GS D Max r = 17 mΩ at V = -1.5 V, I = -8.3 A DS(on) GS D High performance trench technology for extremely low r DS(on) Applications High power and current handling capability in a widely used Battery Management surface mount package Load Switch 100% UIL Tested Termination is Lead-free and RoHS Compliant HBM ESD capability level >2 KV typical (Note 4) Bottom Top Pin 1 G S S S D D D D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -20 V DS V Gate to Source Voltage ±8 V GS Drain Current -Continuous (Package limited) T = 25 °C -18 C -Continuous (Silicon limited) T = 25 °C -54 C I A D -Continuous T = 25 °C (Note 1a) -12 A -Pulsed -50 E Single Pulse Avalanche Energy 37 mJ AS Power Dissipation T = 25 °C 41 C P W D Power Dissipation T = 25 °C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC510P FDMC510P MLP 3.3X3.3 13 ’’ 12 mm 3000 units ©2010 1 FDMC510P Rev.C5
