FDN306P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET uses • –2.6 A, –12 V. R = 40 mΩ @ V = –4.5 V DS(ON) ..
FDN308P ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET uses a rugged • –20 V, –1.5 A. R = 125 mΩ @ V = –4.5 ..
FDN327N ,N-Channel 1.8 Vgs Specified PowerTrench MOSFETGeneral Description MOSFETPowerTrenchN-Channel 1.8 October 2001FDN327N
FDN335 ,N-Channel 2.5V Specified PowerTrenchTM MOSFETApplications• High power and current handling capability.• DC/DC converter• Load switchD DSGSTMGSup ..
FDN335N ,N-Channel 2.5V Specified PowerTrench TM MOSFETFeatures• 1.7 A, 20 V. R = 0.07 Ω @ V = 4.5 VThis N-Channel 2.5V specified MOSFET is producedDS(ON ..
FDN335N_NL ,N-Channel 2.5V Specified PowerTrench MOSFETApplications• High power and current handling capability.• DC/DC converter• Load switchD DSGSTMGSup ..
FPD1500SOT89 , LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
FPD1500SOT89 , LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
FPD2250SOT89E , LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FPD2250SOT89E , LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FPD3000 , 2W POWER PHEMT
FPD3000SOT89 , LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
FDN306P
P-Channel 1.8V Specified PowerTrench MOSFET
FDN306P December 2001 FDN306P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses • –2.6 A, –12 V. R = 40 mΩ @ V = –4.5 V DS(ON) GS Fairchild’s advanced low voltage PowerTrench process. R = 50 mΩ @ V = –2.5 V DS(ON) GS It has been optimized for battery power management applications. R = 80 mΩ @ V = –1.8 V DS(ON) GS • Fast switching speed Applications • High performance trench technology for extremely • Battery management low R DS(ON) • Load switch TM • Battery protection • SuperSOT -3 provides low R and 30% higher DS(ON) power handling capability than SOT23 in the same footprint D D S G S TM G SuperSOT -3 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –12 V DSS V Gate-Source Voltage V GSS ±8 I Drain Current – Continuous (Note 1a) A D –2.6 – Pulsed –10 P Maximum Power Dissipation (Note 1a) 0.5 W D (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 250 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 75 RθJC °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 306 FDN306P 7’’ 8mm 3000 units FDN306P Rev D (W) 2001
