FDP6676S ,30V N-Channel PowerTrench SyncFET TMFDP6676S/FDB6676S October 2001 FDP6676S / FDB6676S ™30V N-Channel PowerTrench SyncFET
FDP6676S ,30V N-Channel PowerTrench SyncFET TMFeatures This MOSFET is designed to replace a single MOSFET • 38 A, 30 V. R = 6.5 mΩ @ V = 10 V DS( ..
FDP6690S ,30V N-Channel PowerTrench SyncFET TMFeatures This MOSFET is designed to replace a single MOSFET • 21 A, 30 V. R = 15.5 mΩ @ V = 10 V DS ..
FDP7030 ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
FDP7030BL ,N-Channel Logic Level PowerTrench ?MOSFETGeneral Description
FDP7030BLS ,30V N-Channel PowerTrench SyncFET TMFeatures This MOSFET is designed to replace a single MOSFET • 56 A, 30 V. R = 10.5 mΩ @ V = 10 V DS ..
FQA44N10 ,100V N-Channel MOSFETapplications such as audioamplifiers, high efficiency switching DC/DC converters, andDC motor contr ..
FQA44N30 ,300V N-Channel MOSFET
FQA44N30 ,300V N-Channel MOSFET
FQA44N30 ,300V N-Channel MOSFET
FQA55N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQA55N25 ,250V N-Channel MOSFET
FDP6676S
30V N-Channel PowerTrench SyncFET TM
FDP6676S/FDB6676S October 2001 FDP6676S / FDB6676S ™ 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET • 38 A, 30 V. R = 6.5 mΩ @ V = 10 V DS(ON) GS and parallel Schottky diode in synchronous DC:DC R = 8.0 mΩ @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low • Includes SyncFET Schottky body diode R and low gate charge. The FDP/B6676S DS(ON) includes an integrated Schottky diode using Fairchild’s • Low gate charge (40nC typical) monolithic SyncFET technology. The performance of the FDP/B6676S as the low-side switch in a synchronous rectifier is indistinguishable from the • High performance trench technology for extremely performance of the FDP/B6676 in parallel with a low R and fast switching DS(ON) Schottky diode. • High power and current handling capability • D D G G G S TO-263AB TO-220 D FDP Series FDB Series S S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS VGSS Gate-Source Voltage ±16 V I Drain Current – Continuous (Note 1) A D 76 – Pulsed (Note 1) 150 P W D Total Power Dissipation @ T = 25°C C 70 Derate above 25°C W/°C 0.56 T , T J STG Operating and Storage Junction Temperature Range –55 to +150 °C T Maximum lead temperature for soldering purposes, °C L 275 1/8” from case for 5 seconds Thermal Characteristics R Thermal Resistance, Junction-to-Case 1.8 θJC °C/W R θJA Thermal Resistance, Junction-to-Ambient 55 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6676S FDB6676S 13’’ 24mm 800 FDP6676S FDP6676S Tube n/a 45 FDP6676S/FDB6676S Rev. C (W) 2001
