FDQ7238S ,Dual Notebook Power Supply N-Channel PwerTrench in SO-14 PackageFeatures The FDQ7238S is designed to replace two single SO-8 · Q2: 14 A, 30V. R = 9.5 mW @ V = 10V ..
FDQ7244S ,Dual Notebook Power Supply N-Channel PowerTrench in SO-14 PackageElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type M ..
FDQ7244S ,Dual Notebook Power Supply N-Channel PowerTrench in SO-14 PackageFeatures The FDQ7244S is designed to replace two single SO-8 · Q2: 14 A, 30V. R = 9.5 mW @ V = 10V ..
FDQ7698S ,Dual Notebook Power Supply N-Channel PowerTrench in SO-14 PackageElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type M ..
FDR4410 ,N-Channel Enhancement Mode Field Effect TransistorFeaturesThe FDR4410 has been designed as a smaller, low cost9.3 A, 30 V. R = 0.013 Ω @ V = 10 V ..
FDR4410 ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ ..
FQB11P06TM ,60V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -11.4A, -60V, R = 0.175Ω @V = -10 VDS ..
FQB12N20 ,200V N-Channel MOSFET
FQB12N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 11.6A, 200V, R = 0.28Ω @V = 10 VDS(on ..
FQB12N50 ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 12.1A, 500V, R = 0.49Ω @V = 10 VDS(on ..
FQB12N60C ,600V N-Channel Advance QFET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 12A, 600V, R = 0.65Ω @V = 10 VDS(on) ..
FQB12P10TM ,100V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FDQ7238S
Dual Notebook Power Supply N-Channel PwerTrench in SO-14 Package
September 2003 Ó2003 FDQ7238S Rev A1 (W)
FDQ7238S
Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package
General Description The FDQ7238S is designed to replace two single SO-8 MOSFETs in DC to DC power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using
Fairchild’s SyncFET TM technology.
Features Q2: 14 A, 30V. R DS(on) = 9.5 mW @ VGS = 10V R DS(on) = 10.5 mW @ VGS = 4.5V
Q1: 11 A, 30V. R DS(on) = 14.5 mW @ VGS = 10V R DS(on) = 16 mW @ VGS = 4.5V
SO-14 G1 G2
Vin S2S2 Absolute Maximum Ratings TA = 25° C unless otherwise noted
Symbol Parameter Q2 Q1 Units VDSS Drain-Source Voltage 30 30 V
VGSS Gate-Source Voltage ±16 ±16 V
ID Drain Current - Continuous (Note 1a) 14 11 A - Pulsed 50 50
PD Power Dissipation for Single Operation (Note 1a & 1b) 2.4 1.8 W (Note 1c & 1d) 1.3 1.1
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics RqJA Thermal Resistance, Junction-to-Ambient (Note 1a & 1b) 52 68 °C/W (Note 1c & 1d) 94 118
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity FDQ7238S FDQ7238S 13” 16mm 2500 units
pin 1
