FDZ208P ,P-Channel 30 Volt PowerTrench BGA MOSFETApplications • 3.5 x 4 mm footprint • Battery management • High power and current handling capabil ..
FDZ209N ,60V N-Channel PowerTrench BGA MOSFETApplications · Outstanding thermal transfer characteristics: 4 times better than SSOT-6 · Solenoid ..
FDZ2554P ,Dual P-Channel 2.5V Specified PowerTrench BGA MOSFETApplications• Outstanding thermal transfer characteristics:• Battery managementsignificantly better ..
FDZ2554P ,Dual P-Channel 2.5V Specified PowerTrench BGA MOSFETFeaturesCombining Fairchild’s advanced 2.5V specified• –6.5 A, –20 V. R = 28 mΩ @ V = –4.5 VDS(ON) ..
FDZ291P ,P-Channel 1.5 V Specified PowerTrench BGA MOSFETApplications • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Battery m ..
FDZ293P ,-20V P-Channel 2.5 V Specified PowerTrench BGA MOSFETGeneral Descriptionto PCBCombining Fairchild’s advanced 2.5V specified PowerTrench Outstanding ther ..
FS3KMA-5A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS3UM-18A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS401LF , PC to TV Video Scan Converters
FS40SM-5 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS40SM-5 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS40SM-6 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDZ208P
P-Channel 30 Volt PowerTrench BGA MOSFET
FDZ208P F208P January 2002 FDZ208P Ò Ò P-Channel 30 Volt PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 30 Volt P -Channel · –12.5 A, –30 V. R = 10.5 mW @ V = –10 V DS(ON) GS Trench II Process with ± 25 Volts Vgs. Abs. Max Gate RDS(ON) = 16.5 mW @ V GS = –4.5 V Rating for the ultimate low Rds Battery Protection MOSFET. This MOSFET also embodies a 2 · Occupies only 14 mm of PCB area. Only 42% of breakthrough in packaging technology which enables the area of SO-8 the device to combine excellent thermal transfer characteristics, high current handling capability, ultra- · Ultra-thin package: less than 0.76 mm height when low profile packaging, low gate charge, and low R . DS (ON) mounted to PCB 2 Applications · 3.5 x 4 mm footprint · Battery management · High power and current handling capability · Load switch · Battery protection S Pin 1 D D D D D D D S S S S D G D S S S S D D S S S S D D G S S S D Pin 1 D Bottom Top o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –30 V V Gate-Source Voltage V GSS ± 25 ID Drain Current – Continuous (Note 1a) –12.5 A – Pulsed –60 P Power Dissipation (Steady State) (Note 1a) 2.2 W D (Note 1a) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +150 J stg °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 56 R °C/W qJA Thermal Resistance, Junction-to-Ball (Note 1) 4.5 RqJB °C/W Thermal Resistance, Junction-to-Case (Note 1) 0.6 R °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 208P FDZ208P 7’’ 8mm 3000 units Ó2002 FDZ208P Rev. C (W)
