FGH60N60UFD ,600V, 60A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGH75T65UPD ,650V, 75A Field Stop Trench IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGK60N6S2D ,600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diodeapplications where lowconduction loss, fast switching times and UIS capability are Low Gate Charge ..
FGL40N120AND ,1200V NPT IGBTApplicationsInduction Heating, UPS, AC & DC motor controls and generalpurpose inverters.C CG GTO-26 ..
FGL40N120AND. ,1200V NPT IGBTFGL40N120AND 1200V NPT IGBTFebruary 2005FGL40N120AND1200V NPT IGBT
FGL40N120ANDTU ,1200V NPT IGBTFeatures Description• High speed switching Employing NPT technology, Fairchild’s AND series of IGBT ..
FSAV332 ,Low On Resistance Quad Video Switch with Individual EnablesApplications• Y/C video or CVBS video switch in LCD, plasma, andprojector displays Ordering Code: O ..
FSAV332MTC ,Low On Resistance Quad Video Switch with Individual EnablesApplications• Y/C video or CVBS video switch in LCD, plasma, andprojector displays Ordering Code: O ..
FSAV332MTCX ,Low On Resistance Quad Video Switch with Individual EnablesFSAV332 Wide Bandwidth Video SwitchApril 2004Revised January 2005FSAV332Wide Bandwidth Video Switch
FSAV332QSCX ,Low On Resistance Quad Video Switch with Individual EnablesFeaturesThe Fairchild video switch FSAV32 is a quad high speed
FGH60N60UFD
600V, 60A, Field Stop IGBT
FGH60N60UFD 600 V, 60 A Field Stop IGBT March 2013 FGH60N60UFD 600 V, 60 A Field Stop IGBT Features General Description ® • High Current Capability Using novel field stop IGBT technology, Fairchild ’s field stop IGBTs offer the optimum performance for solar inverter, UPS, • Low Saturation Voltage: V = 1.9 V @ I = 60 A CE(sat) C welder and PFC applications where low conduction and switch- • High Input Impedance ing losses are essential. • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC E C C G G COLLECTOR E (FLANGE) Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES V Gate to Emitter Voltage ± 20 V GES o Collector Current @ T = 25 C 120 A C I C o Collector Current @ T = 100 C 60 A C o I Pulsed Collector Current 180 A CM (1) @ T = 25 C C o Maximum Power Dissipation @ T = 25 C 298 W C P D o Maximum Power Dissipation @ T = 100 C 119 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive test , Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case - 0.33 C/W JC o R (Diode) Thermal Resistance, Junction to Case - 1.1 C/W JC o R Thermal Resistance, Junction to Ambient - 40 C/W JA ©2008 1 FGH60N60UFD Rev. C0
