FJPF6806D ,NPN Triple Diffused Planar Silicon TransistorFJPF6806DFJPF6806DHigh Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) ..
FJT1100 ,Ultra Low Leakage Diodes' - . FAIRCHILD SEMICONDUCTOR an yirt_,1yani:rv unanua 7 (r
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FJT44 ,NPN Epitaxial Silicon TransistorFJT44FJT44High Voltage Transistor1SOT-2231.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Tr ..
FJT44KTF ,NPN Epitaxial Silicon TransistorFJT44FJT44High Voltage Transistor1SOT-2231.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Tr ..
FJT44TF ,NPN Epitaxial Silicon TransistorFJT44FJT44High Voltage Transistor1SOT-2231.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Tr ..
FJV1845EMTF ,NPN Epitaxial Silicon TransistorFJV1845FJV1845Amplifier Transistor• Complement to FJV992 32SOT-2311. Base 2. Emitter 3. Collector ..
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FST32X245 ,16-Bit Bus SwitchElectrical CharacteristicsT = −40 °C to +85 °CAVCCSymbol Parameter Units ConditionsMin Typ Max(V)(N ..
FST32X245 ,16-Bit Bus SwitchFeaturesThe Fairchild Switch FST32X245 provides 16-bits of high
FJPF6806D
NPN Triple Diffused Planar Silicon Transistor
FJPF6806D FJPF6806D High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) • High Collector-Base Breakdown Voltage : BV = 1500V CBO • High Switching Speed : t (typ.) =0.1μs F • For Color TV TO-220F 1 1.Base 2.Collector 3.Emitter Equivalent Circuit C B NPN Triple Diffused Planar Silicon Transistor 50Ω typ. E Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Rating Units V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 750 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current (DC) 6 A C I * Collector Current (Pulse) 12 A CP P Collector Dissipation 40 W C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Conditions Min Typ Max Units I Collector Cut-off Current V =1400V, R =0 1 mA CES CB BE I Collector Cut-off Current V =800V, I =0 10 μA CBO CB E I Emitter Cut-off Current V =4V, I =0 40 200 mA EBO EB C BV Base-Emitter Breakdown Voltage I =300mA, I =0 6 V EBO E C h DC Current Gain V =5V, I =1A 8 FE1 CE C h V =5V, I =4A 47 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =4A, I =1A 5 V CE C B V (sat) Base-Emitter Saturation Voltage I =4A, I =1A 1.5 V BE C B V Damper Diode Turn On Voltage I = 4.5A 2 V F F t * Storage Time V =200V, I =4A, R =50Ω 3 μs STG CC C L I =1.0A, I = - 2.0A t * Fall Time B1 B2 0.2 μs F * Pulse Test: PW=20μs, duty Cycle=1% Pulsed Thermal Characteristics T =25°C unless otherwise noted C Symbol Parameter Typ Max Units R Thermal Resistance, Junction to Case 3.1 °C/W θjC ©2002 Rev. A, July 2002
