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ICL7667MJA/883B |ICL7667MJA883BHARRISN/a23avaiDual-Power MOSFET Driver (Inverting)


ICL7667MJA/883B ,Dual-Power MOSFET Driver (Inverting)ELECTRICAL CHARACTERISTICS (VDD = 15V, Over Temperature, unless otherwls? noted.) PARAMETER SYMB ..
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ICL7667MJA/883B
Dual-Power MOSFET Driver (Inverting)
19-0862: Fiev tl 2/89
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Dual Power MOSFET Driver
General Description
The ICL7667 is a dual monolithic power MOSFET driver
designed to translate TTL inputs to high voltage/current
outputs. ls low delay and transition times make it ideal
to drive power MOSFETs for switching power supplies,
motor controllers, and DC-DC converters, The lCL7667's
CMOS output stage drives within millivohs of the supply
rail, allowing the power MOSFETs their minimum ON
resistance, The ICL7667's high speed minimizes power
losses in switching power supplies and DC-DC con-
verters due to rapid charging/discharging of the gate
capacitance of the power MOSFETs. The ICL7667 inputs
are TTL compatible, enabling direct interface to common
switched mode power supply controllers.
Features
. Fast Rise and Fall Times - Typically 20ns
with1000pF Load
. Wide Supply Range: VDD = 4.5V to 17V
. Low Power Consumption:
6mW with Inputs Low
120mW with Inputs High
TTL/CMOS Input Compatible
Low Rom - Typically 452
Pin Equivalent to DS0026/DS0056, TSC426,
SG1626/SG2626/SG3626
Applications Ordering Information
Switching Power Supplies PART TEMP. RANGE PACKAég ",
DC-DC Converters CL7667CBA (YC to +70''C, gLead SO _ .
Motor Controllers -CL7667CPA CC to +70 C 8 Lead Plasrc DF '
_ . . CL7667CJA 00 to +700 jLead CFEDIP
Pin Diode Drivers |CL7667MJA -65'C, to +1250 8l ead CEFPLP
Functional Diagram Pin Configuration
Top View
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”CL 7667
Dual Power MOSFET Driver
ABSOLUTE MAXIMUM RATINGS
Supply Voltage VDD to GND . _ _ V _ - _ 18V Maximum Chip Temperature V . . +150“C
InpuiVoltage _ _ . _ _ . _ _ T _ . . V30 40 is) to GND -0 3V Storage Temperature _ . . _ _ 65:010 1600
Package Disspaton Lead Temperature (Soldering 10seconds) V _ . T _ r30(YC
(derate linearly above 50'' C by 5 SmW/ C)
Plastic Dip _ T V . . ' _ V 300mW
Smaii Outnne V ,.. _ _ V _ _ ............. 200mW
CERDIP ,.,. . .,. _ _400mW
Stresses above Au, listed under Absolute Maxtmum Halings' may cause permanent damage to me dewce These are stress rahngs only and lunciional
operanon of the dewce at these or any other condmons above those indicated in the operational sections of me specrtrcat inn IS not implied E rposure (o absolulo
maximum faring cono0ons tar extended periods may affect the dewue reliability
ELECTRICAL CHARACTERISTICS; (V09 = 15V, Over Temperature unless oznerw1se noted )7
PARAMETER SYMBOL CONDITIONS MIN TYP MAX 1 UNITS
Logic 1 Input Voltage Ve V01: - 4 5V10 17V 2.0 V
Logic 0 Input Voltage " VDD = 4.5V to 17V E 0.8
r------- i _-_-_-H----- - - -- -- - - --
InpUICurrent 1m, VIN = OVIo 15V -0 1 O 11:;J
Output High Voltage Vor; Voc = 15V, No load 14.95 V 'i)
Output Loy Vohage VOL VDD - 15V, No load (105 1L V
VIN = W, lam = +10rrA,T, = 25C 4 10 ‘1
VN = Vik. lour = -10mA, TA = 25''C 4 12
Output Resstance l ROUT " = W lour = +10mA 6 12 1 Q 1
VIN = Ve iour = -10mA 6 13 _ ---i
_k i ‘H
V.N = +3V. both inputs. TA = 25"C 7 l
V1N= OV, both inputs. TA = 25C 0 4
Power Supply Current loo V N-- - +3V, both Inputs 8 mA _
ViN- - 0V. both inputsi 0 4 "
g "_-_- - ---_, -- -- .¥. - _ -
1131 Figure 1.C10AD = 1nF. TA-- - 250 20 30 .
Delay Time (Note 1) Figure 1, CLOAD = MP 25 40 1 1
_ 102 Figure l, CLOAD " 1nF, TA = 2erc 25 50 "
Delay Time (Note l) Ifrure l, CLtoAD_--_1r - 1nF 30 60 l ns I
. lu Figure l, CLOAD - 1nF, TA = 25 C 20 30 _
Rise Time (Note 1) Figure l, ClOAD = 1nF 25 4O 1 1
_ " Figure 1, CLOAD = 1nF, TA - 25C 20 30 1
Fall Time (Note 1) Figure 1, CLOAD = 1nF 25 40 ( 1
Note1:Sw1Ichingtimes guaranteed by design, not tested,
Van 15V ,
w - - "----t,,-iL
INPUI T 4 " 0 lpf ',
0 " ICL7667 I
NPUTME AND 1NPU1 ----tpo-- OUTPUI 1
FALL TIMES S " A
ly/ l ir'- - T £1.1000pi l
OUTPUT (W - I
Figure 1 Test Circuit
2 IVI AX KI/Vl
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