IGA03N120H2 ,IGBTs & DuoPacksapplications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel ..
IGB03N120H2 ,1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...applications offers: - loss reduction in resonant circuits P-TO-247-3-1 P-TO-263-3-2 (D²-PAK)P-TO-2 ..
IGB15N60T ,1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...applications offers : - very tight parameter distribution P-TO-263-3-2 (D²-PAK)(TO-263AB) - high r ..
IGB30N60T , Low Loss IGBT in TrenchStop and Fieldstop technology
IGB50N60T ,1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...applications offers : - very tight parameter distribution P-TO-247-3-1 (TO-220AC) - high ruggedn ..
IGD01N120H2 ,IGBTs & DuoPacksapplications offers: - loss reduction in resonant circuits P-TO-263-3-2 (D²-PAK)P-TO-220-3-1 P-TO- ..
IR3Y30M1 , CCD Signal Processors for B/W CCD Cameras
IR3Y30M1 , CCD Signal Processors for B/W CCD Cameras
IR4007K , Switched Mode Power Supply IC
IR4426 ,Dual Low Side Driver, Inverting Input in a 8-pin DIP package Data Sheet No. PD60177 Rev. FIR4426/IR4427/IR4428(S) & (PbF)DUAL LOW SIDE DRIVER
IR4426PBF ,Dual Low Side Driver, Inverting Input in a 8-pin DIP packageElectrical CharacteristicsV (V ) = 15V, T = 25°C unless otherwise specified. The V , and I paramete ..
IR4426S ,Dual Low Side Driver, Inverting Input in a 8-lead SOIC packageElectrical CharacteristicsV (V ) = 15V, T = 25°C unless otherwise specified. The V , and I paramete ..
IGA03N120H2
IGBTs & DuoPacks
IGA03N120H2
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic Characteristic
IGA03N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Switching Energy ZVT, Inductive Load
IGBT Characteristic IGA03N120H2 R CU
10Hz100Hz1kHz10kHz100kHz
10A
R CU10V100V1000V0,01A
0,1A
10Af, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 82Ω)
Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C)
R D
ISSI
ION
25°C50°C75°C100°C125°C
10W
20W
R CU
25°C50°C75°C100°C125°C150°C0ATC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature (Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature (VGE ≤ 15V, Tj ≤ 150°C)
IGA03N120H2 LLE
CTOR1V2V3V4V5V
10A
LLE
CTOR1V2V3V4V5V0A
10AVCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics (Tj = 25°C)
Figure 6. Typical output characteristics (Tj = 150°C)
R CU5V7V9V
10A
12A
t),
COLL
SA
TIO
VO
LTAG
-50°C0°C50°C100°C150°C0VVGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics (VCE = 20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature (VGE = 15V)
IGA03N120H2 t,
CHI
IMES2A4A
1ns
10ns
100ns
1000ns
t,
CHI
IMES50Ω100Ω150Ω1ns
10ns
100ns
1000ns IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current (inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82Ω,
dynamic test circuit in Fig.E)
Figure 10. Typical switching times as a
function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E)
CHING TIME
25°C50°C75°C100°C125°C150°C1ns
10ns
100ns
1000ns
(th
),
GAT
R THR
D V
-50°C0°C50°C100°C150°CTj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature (inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82Ω,
dynamic test circuit in Fig.E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature (IC = 0.09mA)
