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IGD01N120H2INFINEONN/a35000avaiIGBTs & DuoPacks


IGD01N120H2 ,IGBTs & DuoPacksapplications offers: - loss reduction in resonant circuits P-TO-263-3-2 (D²-PAK)P-TO-220-3-1 P-TO- ..
IGP03N120H2 ,IGBTs & DuoPacksDynamic Characteristic Input capacitance C - V =25V, 205 - pF iss CEOutput capacitance C V =0V, - ..
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IGW03N120H2 ,IGBTs & DuoPacksapplications offers: - loss reduction in resonant circuits P-TO-247-3-1 P-TO-263-3-2 (D²-PAK)P-TO-2 ..
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IGD01N120H2
IGBTs & DuoPacks
IGP01N120H2, IGB01N120H2 IGD01N120H2 HighSpeed 2-Technology Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Tj Package Ordering Code 150°C P-TO-263 (D2PAK) Q67040-S4592 150°C P-TO-252 (DPAK) Q67040-S4591
Maximum Ratings

IGP01N120H2, IGB01N120H2 IGD01N120H2
Thermal Resistance
Characteristic

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic Characteristic
IGP01N120H2, IGB01N120H2 IGD01N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Switching Energy ZVT, Inductive Load
IGBT Characteristic

IGP01N120H2, IGB01N120H2 IGD01N120H2
COL
CUR
10Hz100Hz1kHz10kHz100kHz
COL
CUR10V100V1000V
,01A
0,1A
10Af, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency

(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 241Ω)
Figure 2. Safe operating area

(D = 0, TC = 25°C, Tj ≤ 150°C)
WER D
ATI
25°C50°C75°C100°C125°C150°C
10W
15W
20W
25W
30W
COL
URR
25°C50°C75°C100°C125°C150°C0ATC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature

(Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature

(VGE ≤ 15V, Tj ≤ 150°C)
IGP01N120H2, IGB01N120H2 IGD01N120H2
COL
URR1V2V3V4V5V
COL
URR1V2V3V4V5V6VVCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics

(Tj = 25°C)
Figure 6. Typical output characteristics

(Tj = 150°C)
COL
URR5V7V9V0A
(sat)
COL
R SA
TURA
LTAGE
-50°C0°C50°C100°C150°C0VVGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics

(VCE = 20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature

(VGE = 15V)
IGP01N120H2, IGB01N120H2 IGD01N120H2
SWIT
G T
IME1A2A
10ns
100ns
1000ns
SWIT
G T
IME
50Ω100Ω150Ω200Ω1ns
10ns
100nsIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current

(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 241Ω, dynamic test circuit in Fig.E)
Figure 10. Typical switching times as a
function of gate resistor

(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 1A,
dynamic test circuit in Fig.E)
t,
ING TIMES
0°C50°C100°C150°C
10ns
100ns
GE(th
),
ITTE
HRES
-50°C0°C50°C100°C150°CTj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature

(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 1A, RG = 241Ω,
dynamic test circuit in Fig.E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature

(IC = 0.03mA)
IGP01N120H2, IGB01N120H2 IGD01N120H2
SWI
G EN1A2A3A
0.0mJ
0.2mJ
0.4mJ
0.6mJ
SWI
G EN
50Ω100Ω150Ω200Ω0.05mJ
0.10mJ
0.15mJ
0.20mJ
0.25mJIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current

(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 241Ω,
dynamic test circuit in Fig.E )
Figure 14. Typical switching energy losses
as a function of gate resistor

(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 1A,
dynamic test circuit in Fig.E )
CHING
SSES
-40°C25°C100°C150°C0.00mJ
0.05mJ
0.10mJ
0.15mJ
0.20mJ
0.25mJ
f,
RN OF
F SW
ITCHING
0V/us1000V/us2000V/us3000V/us0.00mJ
0.02mJ
0.04mJ
0.06mJC=0.3A, TJ=25°C Tj, JUNCTION TEMPERATURE dv/dt, VOLTAGE SLOPE
Figure 15. Typical switching energy losses
as a function of junction temperature

(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 1A, RG = 241Ω, dynamic test circuit in Fig.E )
Figure 16. Typical turn off switching energy
loss for soft switching

(dynamic test circuit in Fig. E)
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