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IR2011SPBFIORN/a10avaiHIGH AND LOW SIDE DRIVER
IR2011SPBFIRN/a1589avaiHIGH AND LOW SIDE DRIVER


IR2011SPBF ,HIGH AND LOW SIDE DRIVERapplications. The floating channel can be used to drive an N-channelpower MOSFET in the high side ..
IR2011SPBF ,HIGH AND LOW SIDE DRIVERFeaturesProduct Summary• Floating channel designed for bootstrap operationV 200V max.Fully operatio ..
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IR2011SPBF
HIGH AND LOW SIDE DRIVER
Data Sheet No.PD60217 Rev A
International
Titait, Rectifier IR2011(S) & (PbF)
HIGH AND LOW SIDE DRIVER
Features Product Summary
q Floating channel designed for bootstrap operation
Fully operational up to +200V VOFFSET 200V max.
Tolerant to negative transient voltage, dV/dt immune
q Gate drive supply range from 10V to 20V
q Independent low and high side channels kyr/- 1.0A /1.0A typ.
q Input logicHIN/LIN active high
q Undervoltage lockout for both channels VOUT 10 - 20V
q 3.3V and 5V_inpl_Jt logic gompatibie
. CMOS Schmitt-triggered inputs with pull-down ton/off 80 & 60 ns typ.
q Matched propagation delay for both channels
q 8-Lead SOIC is also available LEAD-FREE (PbF) Delay Matching 20 ns max
Applications
. Audio Class D amplifiers
. High power DC-DC SMPS converters Packages
. Other high frequency applications ' :
. . J wDescription QIPo fig
The IR2011 is a high power, high speed power MOSFET driver with independent high
and low side referenced output channels, ideal for Audio Class D and DC-DC converter 8-Lead SOIC
applications. Logic inputs are compatible with standard CMOS or LSTTL output, down mm IS
to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for also available
minimum driver cross-conduction. Propagation delays are matched to simplify use in LEAD-FREE (PbF)
high frequency applications. The Mating channel can be used to drive an N-channel
power MOSFET in the high side configuration which operates up to 200 volts. Propri-
etary HVIC and latch Immune CMOS technologies enable mggedized monolithic con- 8-Lea d PDIP
struction. IR2011
Typical Connection
COM LOAD
(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only. Please
refer to our Application Notes and DesignTips for proper circuit board layout.
1
|R2011(S) & (PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
International
TOR Rectifier
Symbol Definition Min. Max. Units
VB High side floating supply voltage -0.3 250
vs High side Mating supply offset voltage VB - 25 VB + 0.3
VH0 High side floating output voltage Vs - 0.3 VB + 0.3
Vcc Low side foted supply voltage -0.3 25 V
VLo Low side output voltage -0.3 VCC +0.3
VIN Logic input voltage (HIN & LIN) COM -0.3 Vcc +0.3
dVsldt Allowable offset supply voltage transient (hgure 2) - 50 V/ns
PD Package power dissipation @ TA f +25°C (8-Iead DIP) - 1.0
(8-Iead SOIC) - 0.625 W
RTHJA Thermal resistance, junction to ambient (8-lead DIP) - 125 "CA/V
(8-Iead SOIC) - 200
TJ Junction temperature - 150
Ts Storage temperature -55 150 ''C
TL Lead temperature (soldering, 10 seconds) - 300
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. The vs and COM offset ratings
are tested with all supplies biased at 15V differential.
Symbol Definition Min. Max. Units
VB High side floating supply absolute voltage Vs + 10 Vs + 20
Vs High side floating supply offset voltage Note 1 200
VH0 High side floating output voltage Vs VB
VCC Low side ftxed supply voltage 10 20 V
VLo Low side output voltage 0 VCC
VIN Logic input voltage (HIN & LIN) COM 5.5
TA Ambient temperature -40 125
Note I: Logic operational for Vs of -4 to +200V. Logic state held for Vs of -4V to -VBs.

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