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IR2151IORN/a28900avaiHalf Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package
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IR2151-IR2151S-IR2151STR
Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package
Preliminary Data Sheet No. PD60034-J
[i,.-t,iirrrh1".iepfo |R2151 (NOTE: For new designs, we
TGiR Rect I fl er recommend IR's new products IR2153 and IR21531)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features Product Summary
q Floating channel designed for bootstrap operation
Fully operational to +600V VOFFSET 600V max.
Tolerant to negative transient voltage 0
dV/dt immune Duty Cycle 50 Yo
q Undervoltage lockout ko-H- 100 mA/ 210 mA
q Programmable oscillator frequency
f-- + VOUT 10 - 20V
1.4 x (RT + 759) X c, D dti t 1 2
q Matched propagation delay for both channels ea lme ( yp.) . ps
q Low side output in phase with RT
Packages
Description
The IR2151 is a high voltage, high speed, self-os-
cillating power MOSFET and IGBT driver with both
high and low side referenced output channels. Pro-
prietary HVIC and latch immune CMOS technologies
enable ruggedized monolithic construction. The front
end features a programmable oscillator which is simi-
lar to the 555 timer. The output drivers feature a high
pulse current buffer stage and an internal deadtime
designed for minimum driver cross-conduction. Propa-
gation delays forthe two channels are matched to sim- 8 Lead SOIC
plify use in 50% duty cycle applications. The floating
channel can be used to drive an N-channel power
MOSFET or IGBT in the high side conhguration that
8 Lead PDIP
operates off a high voltage rail up to 600 volts.
Typical Connection
up to 600V
(Refer to Lead Assignment diagram for correct pin conhguration)

IR2151
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
International
TOR Rectifier
Symbol Definition Min. Max. Units
VB High side floating supply voltage -0.3 625
Vs High side floating supply offset voltage VB - 25 VB + 0.3
VH0 High side floating output voltage Vs - 0.3 VB + 0.3
VLo Low side output voltage -0.3 Vcc + 0.3
VRT RT voltage -0.3 VCC + 0.3 V
VCT CT voltage -0.3 Vcc + 0.3
ICC Supply current (note 1) - 25 m A
IRT RT output current -5 5
dngt Allowable offset supply voltage transient - 50 V/ns
PD Package power dissipation @ TA 3 +25°C (8 lead DIP) - 1.0
(8 lead SOIC) - 0.625 W
ReJA Thermal resistance, junction to ambient (8 lead DIP) - 125 °CNV
(8 lead SOIC) - 200
T: Junction temperature - 150
Ts Storage temperature -55 150 "C
TL Lead temperature (soldering, 10 seconds) - 300
Recommended Operating Conditions
The input/output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The Vs offset rating is tested with all supplies biased at 15V differential.
Symbol Definition Min. Max. Units
VB High side sloating supply absolute voltage Vs + 10 Vs + 20
Vs High side floating supply offset voltage - 600
VH0 High side floating output voltage Vs VB V
VLo Low side output voltage 0 VCC
ICC Supply current (note 1) - 5 mA
TA Ambient temperature -40 125 ''C
Note 1:
Because of the lR2151's application specificity toward off-line supply systems, this c contains a zener clamp
structure between the chip Vcc and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC
supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value
resistor connected between the chip Vcc and the rectiMd line voltage and a local decoupling capacitor from
Vcc to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. There-
fore, this circuit should not be driven by a DC, low impedance power source of greater than VCLAMP.

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