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IR21531PBFIRN/a39300avaiHalf Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 0.6us Deadtime in a 8-pin DIP package and differenct phase


IR21531PBF ,Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 0.6us Deadtime in a 8-pin DIP package and differenct phaseFeaturesProduct SummaryIntegrated 600V half-bridge gate driver•V 600V max.OFFSET15.6V zener clamp o ..
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IR21531PBF
Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 0.6us Deadtime in a 8-pin DIP package and differenct phase
Preliminary Data Sheet No. PD60131 revM
Internet onol
TOR Rectifier IR21531(D)(S)8i(PbF)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features Product Summary
q Integrated 600V half-bridge gate driver
q 15.6V zener clamp on Vcc VOFFSET 600V max.
q True micropower start up
q Tighterinitial deadtime control Duty Cycle 50%
q Low temperature coefhcient deadtime
o Shutdown feature (1/6th Vcc) on CT pin Tr/Tp 80/40ns
q Increased undervoltage lockout Hysteresis (1V)
q Lower power level-shifting circuit Vclamp 15.61/
o Constant LO, HO pulse widths at startup .
q Lower di/dt gate driver for better noise immunity Deadtime (typ.) 0.6 ps
q Low side output in phase with RT
q Internal 50nsec (typ.) bootstrap diode (IR21531D) Packages
q Excellent latch immunity on all inputs and outputs
o ESD protection on all leads
q Also available LEAD-FREE
Description
The IR21531(D)(S) are an improved version of the 8 Lead PDIP 8 Lead soc
popular IR2155 and IR2151 gate driver ICs, and in-
corporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard
CMOS 555 timer. The IR21531 provides more functionality and is easierto use than previous ICs. A shutdown
feature has been designed into the CT pin, so that both gate driveroutputs can be disabled using a low voltage
control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage
lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at
startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers,
and by increasing the undervoltage lockout hysteresis to IV. Finally, special attention has been payed to
maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
Typical Connections
IR21531(S) IR21531(D)
Wv 600V '" 600V
- MAX MAX
VCC VB VCC VB
;: Fr,
HO -NVV- HO -
g RT VS RT vs l t
J -L CT LO -L CT LO
Shuldowan T COM Shutdown_]E T T
1
_/\’W_|

International
TOR Rectifier
IR2'1531(D)(S)&(PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.
Symbol Definition Min. Max. Units
VB High side floating supply voltage -0.3 625
Vs High side floating supply offset voltage VB - 25 VB + 0.3
VH0 High side floating output voltage Vs - 0.3 Vs + 0.3
VLo Low side output voltage -0.3 Vcc + 0.3 V
Ver RT pin voltage -O.3 Vcc + 0.3
Vcr CT pin voltage -O.3 Vcc + 0.3
ICC Supply current (note 1) - 25 mA
IRT RT pin current -5 5
dl/s/dt Allowable offset voltage slew rate -50 50 V/ns
PD Maximum power dissipation @ TA s +25''C (8 Lead DIP) - 1.0 W
(8 Lead SOIC) - 0.625
RthJA Thermal resistance, junction to ambient (8 Lead DIP) - 125 o
(8 Lead SOIC) - 200 C/W
TJ Junction temperature -55 150
Ts Storage temperature -55 150 "C
TL Lead temperature (soldering, 10 seconds) - 300
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol Definition Min. Max. Units
VBS High side floating supply voltage Vcc - 0.7 VCLAMP
Vs Steady state high side floating supply offset voltage -3.0 (note 2) 600 V
Vcc Supply voltage 10 VCLAMP
lcc Supply current (note 3) 5 mA
TJ Junction temperature -40 125 ''C
Note 1: This IC contains a zener clamp structure between the chip Vcc and COM which has a nominal breakdown
voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the VCLAMP specified in the Electrical Characteristics section.
Note 2: Care should be taken to avoid output switching conditions where the Vs node flies inductively below ground by
more than 5V.
Note 3: Enough current should be supplied to the Vcc pin ofthe IC to keep the internal 15.6V zener diode clamping the
voltage at this pin.
2

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