IRAMY20UP60B ,iMOTION Series 20A, 600VFeatures• Integrated Gate Drivers• Temperature Monitor and Protection• Overcurrent shutdown• Fully ..
IRC ,Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=9.0A)applications.
Absolute Maximum Ratings
PD-9.565B
IRC630
TO-22O HexSense
Parameter Ma ..
IRC530 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageInternational
IEER
Rectifier
PD-9.454D
IRCSBO
HEXFET® Power MOSFET
Dynamic dv/dt
..
IRC530 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.
Absolute Maximum Ratings
TO-220 HexSense
Parameter Max. Units
ID @ To = 25°C ..
IRC540 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packagehnternati
onal
TOR Rectifier
PD-9.592A
TlC540
HEXFET® Power MOSFET
q Dynamic dv/d ..
IRC630 ,200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.
Absolute Maximum Ratings
PD-9.565B
IRC630
TO-22O HexSense
Parameter Ma ..
IS61LV12816L-8T , 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-8TL , 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-10B , 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-10TQ , 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-10TQI , 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-8BI , 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IRAMY20UP60B
iMOTION Series 20A, 600V
Features• Integrated Gate Drivers• Temperature Monitor and Protection• Overcurrent shutdown• Fully Isolated Package• Low VCE (on) Non Punch Through IGBT Technology.• Undervoltage lockout for all channels• Matched propagation delay for all channels• 5V Schmitt-triggered input logic• Cross-conduction prevention logic• Lower di/dt gate driver for better noise immunity• Motor Power range 0.75~2.2kW / 85~253 Vac• Isolation 2000V minRMS Absolute Maximum RatingsParameter Description Value UnitsV / VIGBT/Diode Blocking Voltage 600CES RRMV+Positive Bus Input Voltage 450VI @ T =25°C RMS Phase Current (Note 1) 20O CI @ T =100°C AO C RMS Phase Current (Note 1) 10IPulsed RMS Phase Current (Note 2) 40OFPWM Carrier Frequency 20 kHzPWMP Power dissipation per IGBT @ T =25°C 68 WD CV Isolation Voltage (1min) 2000 VISO RMST (IGBT & Diodes) Operating Junction temperature Range -40 to +150J°CT (Driver IC)Operating Junction temperature Range -40 to +150JT Mounting torque Range (M4 screw) 0.7 to 1.17 Nm+Note 1: Sinusoidal Modulation at V =400V, T =150°C, F =20kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.J PWMNote 2: t <100ms; T =25°C; F =20kHz. Limited by I , see Table "Inverter Section
