IRC634 ,250V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.
Absolute Maximum Ratings
TO4t20 HexSense
- _-_ Parameter Max. Units
19 @ Tc = ..
IRC644 ,250V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageInternational
TOR
Rectifier
PD-9.569A
IRC644
HEXFET® Power MOSFET
. Dynamic dv/dt ..
IRC740 ,400V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.
Absolute Maximum Ratings
VDSS = 400V
RDS(on) = 0.5592
Parameter Max. Units
..
IRC840 ,500V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packagePD-9.593B
lRC840
International
TOR Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Rati ..
IRCZ24 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.TO-220 HexSenseAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Dra ..
IRCZ34 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packagePD - 9.590AIRCZ34®HEXFET Power MOSFETl Dynamic dv/dt RatingV = 60VDSSl Current Sensel 175°C Operati ..
IS61LV256-15JI , 32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV256-15JI , 32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV256-15TI , 32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV25616-10TI , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-12K , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-12K , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IRC634
250V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
applications.
Absolute Maximum Ratings
TO4t20 HexSense
- _-_ Parameter Max. Units
19 @ Tc = 25°C Continuous Drain Current, Ves @ 10 V 8.1
lo © Tc = 100°C Continuous Drain Current, Vos © 10 V 5.1 A
10M - Pulsed Drain Current co _ l?, - -
PD @ Tc = 95°C Power Dissipation 74 - W H
Linear Derating Factor 0.59 _ WPC
Vas Gate-to-Source Voltage - _____,.___1i?9, ________ V
EAS -__._3ilr1g1?_ey.le Avalanche Energy © 130 A ' mJ
IAR Avalanche Current C) 8.1 A
EAR Repetitive Avalanche Energy f_ll)______, ______Zi _________ - TJ
-dv/dt Peak Diode Recovery dv/dt © 4.8 _ V/ns
Tu Operating Junction and ~55 to +150
Tsm Storage Temperature Range °C
Soldering Temperature, for 10 seconds’ 300 (1.6mm from case)
Mounting Tf1r_1e,_i1r?ilSIh11yir_e1tt_, 10 lbhin (1.1 N.m)
Thermal Resistance
t - Parameter Min. Typ. - Max. _ Units
7133ch W - _JunctionmrCase - - 1.7
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - "C/W
' BOJA Junction-to-Ambient - , - 62
25
DATA
SHEETSIRC634
