IRC740 ,400V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.
Absolute Maximum Ratings
VDSS = 400V
RDS(on) = 0.5592
Parameter Max. Units
..
IRC840 ,500V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packagePD-9.593B
lRC840
International
TOR Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Rati ..
IRCZ24 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.TO-220 HexSenseAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Dra ..
IRCZ34 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packagePD - 9.590AIRCZ34®HEXFET Power MOSFETl Dynamic dv/dt RatingV = 60VDSSl Current Sensel 175°C Operati ..
IRCZ34 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.TO-220 HexSenseAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Dra ..
IRCZ44 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packagePD - 9.529BIRCZ44®HEXFET Power MOSFETl Dynamic dv/dt RatingV = 60VDSSl Current Sensel 175°C Operati ..
IS61LV256-15JI , 32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV256-15JI , 32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV256-15TI , 32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV25616-10TI , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-12K , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-12K , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IRC740
400V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
applications.
Absolute Maximum Ratings
VDSS = 400V
RDS(on) = 0.5592
Parameter Max. Units
Io © To = 25°C Continuous Drain Current, Ves @ 10 V 10
lo @ To = 100°C Continuous Drain Current, Vos @ 10 V 6.3 A
IDM Pulsed Drain Current (ID 40
Pro @ Tc = 25°C Power Dissipation 125 W
Linear Derating Factor 1.0 WPC
Vss Gate-to-Source Voltage 4:20 V
EAS Single Pulse Avalanche Energy © 210 mJ
iAn Avalanche Current C) 10 A
EAR Repetitive Avalanche Energy Ci) 13 mJ
dv/dt Peak Diode Recovery dv/dt © 4.0 V/ns
TJ Operating Junction and -55 to +150
Tsm Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32or M3 screw 10 Ibf-in (1.1 Nom)
Thermal Resistance
Parameter Min. Typ. Max. Units
Flak; Junction-to-Case - - 1 .0
Race Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
RBJA Junction-to-Ambient - - 62
57
DATA
SHEETS1RC740
