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IRCZ24IRN/a15avai60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package


IRCZ24 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.TO-220 HexSenseAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Dra ..
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IRCZ34 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.TO-220 HexSenseAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Dra ..
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IRF1010E ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for allcommercial-industrial
IRF1010E. ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
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IRCZ24
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
applications.TO-220 HexSenseAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10V 17D C GSAI @ T = 100°C Continuous Drain Current, V @ 10V 12D C GSI Pulsed Drain Current  68DMP @T = 25°C Power Dissipation 60 WD CLinear Derating Factor 0.40 W/°CV Gate-to-Source Voltage ±20 VGSE Single Pulse Avalanche Energy ‚ 6.0 mJASdv/dt Peak Diode Recovery dv/dt ƒ 4.5 AT Operating Junction and -55 to + 175J°CT Storage Temperature RangeSTGSoldering Temperature, for 10 seconds 300 (1.6mm from case)Mounting Torque, 6-32 or screw 10 lbf•in (1.1 N•m)Thermal ResistanceParameter Min. Max. UnitsR Junction-to-Case — — 2.5θJCR Case-to-Sink, Flat, Greased Surface — 0.50 — °C/WθCSR Junction-to-Ambient — — 62θJA** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994.C-1Untitled-1 1 6/3/97, 3:27 PMIRCZ24
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