IRF1302S ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.IRF1302S IRF1302LAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous D ..
IRF131 ,N-Channel Power MOSFETs/ 20 A/ 60-100 VElectrical Characteristics (T c= 25°C unless otherwise noted)
Symbol Characteristic Min Max Unlt T ..
IRF1310N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
IRF1310NPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
TOR RectifierWuan-eDem.
Advanced Process Technology
Dynamic dv/dt Rating
175° ..
IRF1310NS ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1310NSTRL ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 91514BIRF1310NS/L®HEXFET Power MOSFETl Advanced Process Technology DV =100Vl Surface Mount (IR ..
IS61LV2568-10T , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568-12K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-10KI , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-10KI , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IRF1302S
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
applications.IRF1302S IRF1302LAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10V 174D C GSI @ T = 100°C Continuous Drain Current, V @ 10V 120 AD C GSI Pulsed Drain Current 700DMP @T = 25°C Power Dissipation 200 WD CLinear Derating Factor 1.4 W/°CV Gate-to-Source Voltage ± 20 VGSE Single Pulse Avalanche Energy 350 mJASI Avalanche Current See Fig.12a, 12b, 15, 16 AARE Repetitive Avalanche Energy mJARdv/dt Peak Diode Recovery dv/dt TBD V/nsT Operating Junction and -55 to + 175JT Storage Temperature RangeSTG °CSoldering Temperature, for 10 seconds 300 (1.6mm from case )Thermal ResistanceParameter Typ. Max. UnitsR Junction-to-Case ––– 0.74 °C/WθJCR Junction-to-Ambient (PCB mount) ––– 40θJA 1Downloaded from: http://www.ic-phoenix.com/stock/IRF1302S/IRF1302L
