IRF1310NPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
TOR RectifierWuan-eDem.
Advanced Process Technology
Dynamic dv/dt Rating
175° ..
IRF1310NS ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1310NSTRL ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 91514BIRF1310NS/L®HEXFET Power MOSFETl Advanced Process Technology DV =100Vl Surface Mount (IR ..
IRF1310NSTRRPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplicationswhtmstiite Maximum Ratings
Parameter Max. Units
ID @ TC _ 25'C Canllnuous Dram Curr ..
IRF1310S ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection resistance and candissipate up to 2.0W in a typ ..
IRF1312 ,80V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters80V 10mΩ 95A Motor Control Uni ..
IS61LV2568L-10KI , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-10KI , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV256-8TI , 32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216-10K , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IRF1310NPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
applicationsatpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
HEXFET® Power MOSFET
VDSS = 100V
RDS(on) = 0.036Q
Ir)-- 42A
TO-220AB
Parameter Max. Units
ID tp To = 25''C Continuous Drain Current, Veg tp 10V 42
ID tp Tc =100°C Continuous Drain Current, Vss tp 10V 30 A
bu Pulsed Drain Current C) 140
PD @Tc = 25''C Power Dissipation 160 W
Linear Derating Factor 1.1 W/t
Veg GateiSource Voltage , 20 V
EAS Single Pulse Avalanche Energy© 420 mJ
IAR Avalanche Current0) 22 A
EAR Repetitive Avalanche Energy0) 16 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range “c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RM; Junction-to-Case - 0.95
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "C/W
RBJA Junction-tpmt/ent - 62International
TOR RectifierWuan-eDem.
