IRF2807S ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF2807STRLPBF ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF2807Z ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagefeatures com-bine to make this design an extremely efficientand reliable device for use in Automoti ..
IRF2807Z. ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeaturesIRF2807ZLO Advanced Process Technology®HEXFET Power MOSFETO Ultra Low On-ResistanceO Dynami ..
IRF2807ZPBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeaturesIRF2807ZLPbF
IRF2807L-IRF2807S
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 94170
IRF2807S
RF2807L
Advanced Process Technology HEXFET Power MOSFET
Ultra Low On-Resistance D
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching ' A
o Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from International S
Rectifier utilize advanced processing techniques to achieve
extremely lowon-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in awide variety ofapplications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connection
International
TOR Rectifier
VDSS = 75V
RDS(on) = 13mf2
ID = 82A©
resistance and can dissipate up to 2.0W in a typical surface D2Pak TO-262
mount application. IRF2807S IRF2807L
The through-hole version (IRF2807L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 82CO
ID @ TC = 100''C Continuous Drain Current, Vss @ 10V 58 A
IDM Pulsed Drain Current C) 280
PD @Tc = 25°C Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
VGS Gate-to-Source Voltage l 20 V
IAR Avalanche Current© 43 A
EAR Repetitive Avalanche Energy® 23 mJ
dv/dt Peak Diode Recovery dv/dt © 5.9 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range oc
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rsuc J unction-io-C ase - 0.65 o C /W
ReJA Junction-to-Ambient (PCB mount)" - 40
1
02/ 1 4/ 02
IRF2807S/lRF2807L.
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V N/ss = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.074 - V/°C Reference to 25''C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 13 mn VGs = 10V, ID = 43A ©
Ves(m) Gate Threshold Voltage 2.0 - 4.0 V Vos = Was, ID = 250pA
9ts Forward Transconductance 38 - - S Vos = 50V, ID = 43AC0
loss Drain-to-Source Leakage Current - - 25 pA Vos = 75V, N/ss = 0V
- - 250 Vros = 60V, Vss = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A N/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGs = -20V
% Total Gate Charge - - 160 ID = 43A
ths Gate-to-Source Charge - - 29 nC Vos = 60V
di Gate-to-Drain ("Miller") Charge - - 55 Vss = 10V, See Fig. 6 and 13
tum) Turn-On Delay Time - 13 - VDD = 38V
tr Rise Time - 64 - ns ID = 43A
tam) Turn-Off Delay Time - 49 - Rs = 2.59
tf Fall Time - 48 - VGS = 10V, See Fig. 10 ©
u, Internal Drain Inductance - 4.5 - Between Igad, D
nH 6mm (0.25m.) Q: )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 3820 - VGs = 0V
Cass Output Capacitance - 610 - Vos = 25V
Crss Reverse Transfer Capacitance - 130 - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy© - 12806 340© mJ lAs = 50A, L = 370pH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) _ _ 820) A showing the
ISM Pulsed Source Current - - 280 integral reverse G
(Body Diode)© p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V TJ = 25°C, ls = 43A, VGS = 0V ©
tn Reverse Recovery Time - 100 150 ns TJ = 25°C, IF = 43A
G, Reverse Recovery Charge - 410 610 nC di/dt = 100A/ps 69
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L3+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
© Starting To-- 25°C, L = 370pH
Rs = 259, IAS = 43A, VGS=10V (See Figure 12)
co Iso S 43A, di/dt S 300A/ps, VDD S V(BR)DSS!
T J I 175°C
69 Pulse width s: 400ps; duty cycle S 2%.
s This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to T: = 175°C .
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
“When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
