IRF2807Z ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagefeatures com-bine to make this design an extremely efficientand reliable device for use in Automoti ..
IRF2807Z. ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeaturesIRF2807ZLO Advanced Process Technology®HEXFET Power MOSFETO Ultra Low On-ResistanceO Dynami ..
IRF2807ZPBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeaturesIRF2807ZLPbF
IRF2807Z-IRF2807Z.-IRF2807ZS
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
Tart, Rectifier
Features
Description
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
AUTOMOTIVE MOSFET
Advanced Process Technology
Ultra Low On-Resistance
PD - 94659A
IRF2807Z
IRF2807ZS
IRF2807ZL
HEXFET© Power MOSFET
VDSS = 75V
RDS(on) = 9.4mQ
ID = 75A
Specifically designed forAutomotive applications,
this HEXFET© Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures ofthis design are a 175°Cjunction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications. TO-220AB D2Pak TO-262
IRF2807Z IRF2807ZS IRF2807ZL
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 89 A
In @ To = 100°C Continuous Drain Current, I/ss @ ION/ (See Fig. 9) 63
ID @ To = 25°C Continuous Drain Current, Vss @ 10V (Package Limited) 75
IDM Pulsed Drain Current C) 350
PD @Tc = 25°C Maximum Power Dissipation 170 W
Linear Derating Factor 1.1 W/°C
VGS Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) © 160 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value © 200
IAR Avalanche Current C) See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy © m J
To Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 10 lbf- in (1 .1N- m)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 0.90 °C/W
Rocs Case-to-Sink, Flat, Greased Surface 0.50 -
ROJA Junction-to-Ambient - 62
ROJA Junction-to-Ambient (PCB Mount, steady state)© - 40
HEXFET® is a registered trademark of International Rectifier.
1
http://www.datas
heetcataloa.Com/
09/03/03
|RF2807Z/S/L
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V I/ss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coemcient - 0.073 - Vl°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 7.5 9.4 mg VGS = 10V, ID = 53A ©
VGsnh) Gate Threshold Voltage 2.0 - 4.0 V I/os = VGS, ID = 250pA
gfs Forward Transconductance 67 - - S Vos = 25V, ID = 53A
loss Drain-to-Source Leakage Current - .-.-. 20 pA Ws = 75V, VGS = 0V
- - 250 Ws = 75V, I/ss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
q, Total Gate Charge - 71 110 nC b = 53A
As Gate-to-Source Charge - 19 29 Ws = 60V
di Gate-to-Drain ("Miller") Charge - 28 42 I/ss = 10V ©
td(on) Turn-On Delay Time - 18 - ns VDD = 38V
t, Rise Time - 79 - lo = 53A
td(ott) Turn-Off Delay Time - 40 - Rs = 6.29
if Fall Time - 45 - Vss = 10V (9
Lo Internal Drain Inductance - 4.5 - nH Between lead, D
6mm (0.25in.) (i/r) 5
Ls Internal Source Inductance - 7.5 - from package 9. /
and center of die contact s
Ciss Input Capacitance - 3270 - pF Vss = 0V
Coss Output Capacitance - 420 - Vos = 25V
Crss Reverse Transfer Capacitance - 240 - f = 1.0MHz, See Fig. 5
cu, Output Capacitance - 1590 - VGS = 0V, Ws = 1.0V, I = 1.0MHZ
cu, Output Capacitance - 280 - I/ss = 0V, Ws = 60V, f = 1.0MHz
C055 eff. Effective Output Capacitance - 440 - I/ss = 0V, Vos = 0V to 60V
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 89 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 350 integral reverse G
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 53A, VGS = 0V ©
in Reverse Recovery Time - 46 69 ns To = 25°C, IF = 53A, VDD = 25V
er Reverse Recovery Charge - 80 120 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
(O Repetitive rating; pulse width limited by
max. junction temperature. (See Ftg. 11).
co Limited by TJmax, starting TJ = 25°C, L = 0.12mH,
Rs = 259, IAS-- 53A, VGs =10V. Part not
recommended for use above this value.
© ISD I 53A, di/dt S 420A/ps, VDD S V(BR)ross,
Tu 3 175°C.
© Pulse width I 1.0ms; duty cycle I 2%.
co Cass eff. is a fixed capacitance that gives the same charging time
as Coss while Vos is rising from 0 to 80% Voss .
© Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
C) This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
