IRF3000PBF ,300V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsDSS DS(on) D High frequency DC-DC converters300V 0.40@V = 10V 1.6A GS Lead-FreeBene ..
IRF3007 ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.TO-220ABAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Curr ..
IRF3007L ,75V Single N-Channel HEXFET Power MOSFET in a TO-262 packagefeatures of this HEXFET power MOSFET are a 175°Cjunction operating temperature, fast switching spee ..
IRF3007PBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.TO-220ABAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Curr ..
IRF3007PBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeaturesV = 75VDSS Ultra Low On-Resistance 175°C Operating TemperatureR = 0.0126ΩDS(on) Fast Swi ..
IRF3007S ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.2D Pak TO-262IRF3007S IRF3007LAbsolute Maximum RatingsParameter Max. Un ..
IS61LV6416-12B , 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY
IS61LV6416-12BI , 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY
IS61LV6416-12KI , 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY
IS61LV6416-12KL , 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-12TI , 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY
IS61LV6416-8K , 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY
IRF3000PBF
300V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD- 95255
International
IRF3000PbF
Tart, Rectifier SMPS MOSFET
HEXFET© Power MOSFET
Applications Voss RDS(on) max ID
q High frequency DC-DC converters 300V th40f2@Vss = 10V 1.6A
0 Lead-Free
Benefits
0 Low Gate to Drain Charge to Reduce La D
Switching Losses 7
o Fully Characterized Capacitance Including m D
Effective Coss to Simplify Design, (See 5:1]: D
App. Note AN1001) SEED
0 Fully Characterized Avalanche Voltage
and Current Top View SO-8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 1.6
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.3 A
G, Pulsed Drain Current C) 13
PD @TA = 25°C Power Dissipation) 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage t 30 V
dv/dt Peak Diode Recovery dv/dt © 8.9 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 50 °CNV
Notes co through © are on page 8
1
09/20/04
IRF3000PbF
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 300 - - V VGs = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefhcient - 0.38 - V/°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance 0.34 0.40 Q VGS = 10V, ID = 0.96A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V Vos = Vss, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA VDS = 300V, VGS = 0V
- - 250 VDs = 240V, VGS = 0V, To = 150°C
I Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
GSS Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ts Forward Transconductance 2.0 - - S VDs = 50V, ID = 0.96A
Qg Total Gate Charge - 22 33 ID = 0.96A
Qgs Gate-to-Source Charge - 4.7 7.1 nC Vos = 240V
di Gate-to-Drain ("Miller") Charge - 11 17 VGS = 10V,
td(on) Turn-On Delay Time - 8.2 - VDD = 150V
tr Rise Time - 7.2 - ns ID = 0.96A
tam) Turn-Off Delay Time - 23 - Rs = 2.29
tr Fall Time - 23 - VGs = 10V ©
Ciss Input Capacitance - 730 - VGS = 0V
Coss Output Capacitance - 100 - Vos = 25V
Crss Reverse Transfer Capacitance - 20 - pF f = 1.0MHz
Coss Output Capacitance - 940 - N/ss = 0V, Vros = 1.0V, f = 1.0MHz
Cass Output Capacitance - 39 - VGs = 0V, VDs = 240V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 87 - VGs = 0V, Vos = 0V to 240V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 47 mJ
IAR Avalanche Current© - 1.9 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - 1 6 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 13 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V TJ = 25°C, Is = 0.96A, VGS = 0V ©
trr Reverse Recovery Time - 86 130 ns TJ = 25°C, V = 0.96A
Qrr Reverse RecoveryCharge - 250 380 nC di/dt = 100Alps ©
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